MPSA65
MPSA65 Datasheet
MPSA65 / MMBTA65 / PZTA65
| Part | Datasheet |
|---|---|
MPSA65 |
MPSA65 (pdf) |
| Related Parts | Information |
|---|---|
|
MPSA65_D26Z |
MPSA65_D26Z |
|
MPSA65_D27Z |
MPSA65_D27Z |
|
MPSA65_D75Z |
MPSA65_D75Z |
| PDF Datasheet Preview |
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| MPSA65 / MMBTA65 / PZTA65 MPSA65 MMBTA65 PZTA65 TO-92 SOT-23 Mark 2W SOT-223 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process See MPSA64 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCES Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V A °C Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA65 625 *MMBTA65 350 *Device mounted on FR-4 PCB X **Device mounted on FR-4 PCB 36 mm X 18 mm X mm mounting pad for the collector lead min. 6 cm2. **PZTA65 1,000 Units mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation MPSA65 / MMBTA65 / PZTA65 |
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