MPSA65_D75Z

MPSA65_D75Z Datasheet

MPSA65 / MMBTA65 / PZTA65

Part	Datasheet
MPSA65_D75Z	MPSA65_D75Z (pdf)

Related Parts	Information
MPSA65	MPSA65
MPSA65_D26Z	MPSA65_D26Z
MPSA65_D27Z	MPSA65_D27Z

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MPSA65 / MMBTA65 / PZTA65 MPSA65 MMBTA65 PZTA65 TO-92 SOT-23 Mark 2W SOT-223 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process See MPSA64 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCES Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V A °C Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA65 625 MMBTA65 350 Device mounted on FR-4 PCB X Device mounted on FR-4 PCB 36 mm X 18 mm X mm mounting pad for the collector lead min. 6 cm2. *PZTA65 1,000 Units mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation MPSA65 / MMBTA65 / PZTA65

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MPSA65 / MMBTA65 / PZTA65

MPSA65

MMBTA65

PZTA65

TO-92

SOT-23

Mark 2W

SOT-223

PNP Darlington Transistor

This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process See MPSA64 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

VCES

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current - Continuous

TJ, Tstg

Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units

V A °C

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

MPSA65 625
*MMBTA65 350
*Device mounted on FR-4 PCB X **Device mounted on FR-4 PCB 36 mm X 18 mm X mm mounting pad for the collector lead min. 6 cm2.
**PZTA65 1,000

Units
mW/°C °C/W °C/W
1997 Fairchild Semiconductor Corporation

MPSA65 / MMBTA65 / PZTA65

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Datasheet ID: MPSA65_D75Z 634452