MMBT4403K PNP Epitaxial Silicon Transistor
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MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor November 2006 Marking SOT-23 1 Base Emitter Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction and Storage Temperature Range Value -40 -40 -5 -600 350 -55 ~ 150 Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO IBL ICEX hFE Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Base Cut-off Current Collector Cut-off Current DC Current Gain VCE sat Collector-Emitter Saturation Voltage * VBE sat Base-Emitter Saturation Voltage * Current Gain Bandwidth Product Output Capacitance Turn On Time tOFF Turn Off Time * Pulse Test Pulse Duty IC = -0.1mA, IE = 0 IC = -1.0mA, IB = 0 IE = -0.1mA, IC = 0 VCE = -35V, VEB = -0.4V VCE = -35V, VEB = -0.4V VCE = -1V, IC = -0.1mA VCE = -1V, IC = -1.0mA VCE = -1V, IC = -10mA VCE = -2V, IC = -150mA * VCE = -2V, IC = -500mA * IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -20mA, VCE = -10V, f = 100MHz VCB = -10V, IE = 0, f = 140KHz VCC = -30V, VBE = -2V IC = -150mA, IB1 = -15mA VCC = -30V, IC = -150mA IB1 = IB2= -15mA Min. -40 -40 -5 30 60 100 20 |
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