MMBT4403K

MMBT4403K Datasheet


MMBT4403K PNP Epitaxial Silicon Transistor

Part Datasheet
MMBT4403K MMBT4403K MMBT4403K (pdf)
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MMBT4403K PNP Epitaxial Silicon Transistor

MMBT4403K

PNP Epitaxial Silicon Transistor

Switching Transistor

November 2006

Marking

SOT-23 1 Base Emitter Collector

Absolute Maximum Ratings Ta = 25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ, TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction and Storage Temperature Range

Value
-40 -40 -5 -600 350 -55 ~ 150

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO IBL ICEX hFE

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Base Cut-off Current Collector Cut-off Current DC Current Gain

VCE sat Collector-Emitter Saturation Voltage *

VBE sat Base-Emitter Saturation Voltage *

Current Gain Bandwidth Product

Output Capacitance

Turn On Time
tOFF

Turn Off Time
* Pulse Test Pulse Duty

IC = -0.1mA, IE = 0

IC = -1.0mA, IB = 0

IE = -0.1mA, IC = 0

VCE = -35V, VEB = -0.4V

VCE = -35V, VEB = -0.4V

VCE = -1V, IC = -0.1mA VCE = -1V, IC = -1.0mA VCE = -1V, IC = -10mA VCE = -2V, IC = -150mA * VCE = -2V, IC = -500mA *

IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA

IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA

IC = -20mA, VCE = -10V, f = 100MHz

VCB = -10V, IE = 0, f = 140KHz

VCC = -30V, VBE = -2V IC = -150mA, IB1 = -15mA

VCC = -30V, IC = -150mA IB1 = IB2= -15mA

Min.
-40 -40 -5
30 60 100 20
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Datasheet ID: MMBT4403K 634408