MMBT3904K
MMBT3904K Datasheet
MMBT3904K NPN Epitaxial Silicon Transistor
| Part | Datasheet |
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MMBT3904K |
MMBT3904K (pdf) |
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| MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor 2 SOT-23 1 Base Emitter Collector Marking Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction and Storage Temperature Range Value 60 40 6 200 350 -55 ~ 150 Units V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICEX hFE VCE sat VBE sat Cob fT NF Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Output Capacitance Current Gain-Bandwidth Product Noise Figure IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 30V, VEB = 3V VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 50mA VCE = 1V, IC = 100mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA VCB = 5V, IE = 0, f = 1MHz VCE = 20V, IC = 10mA, f = 100MHz IC = 100µA, VCE = 5V, RS = f = 10Hz to 15.7KHz Turn On Time tOFF Turn Off Time * Pulse Test Pulse Duty VCC = 3V, VBE = 0.5V IC = 10mA, IB1 = 1mA VCC = 3V, IC = 10mA, IB1 = IB2 = 1mA |
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