RFP50N05L

RFP50N05L Datasheet

RFP50N05L

Part	Datasheet
RFP50N05L	RFP50N05L (pdf)

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Data Sheet August 2004 RFP50N05L 50A, 50V, Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level 5V driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages. Formerly developmental type TA09872. Ordering Information PACKAGE BRAND RFP50N05L TO-220AB F50N05L NOTE When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RFP50N05L9A. Packaging JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE • 50A, 50V • rDS ON = • UIS SOA Rating Curve Single Pulse • Design Optimized for 5V Gate Drive • Can be Driven Directly from CMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” 2004 Fairchild Semiconductor Corporation RFP50N05L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage Note 1 VDS Drain to Gate Voltage RGS = Note 1 VDGR Continuous Drain Current ID Pulsed Drain Current Note 3 .IDM Gate to Source Voltage VGS Maximum Power Dissipation PD Above TC = 25oC, Derate Linearly Single Pulse Avalanche Energy Rating Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief 334 Tpkg RFP50N05L 50 130 ±10 110 Refer to UIS SOA Curve -55 to 150 300 260 UNITS V A V W W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Note 2 Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 5V Threshold Gate Charge Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient BVDSS VGS TH IDSS IGSS rDS ON t ON tD ON tr tD OFF tf t OFF QG TOT QG 5 QG th ID = 250µA, VGS = 0V Figure 10 VGS = VDS, ID = 250µA Figure 9 VDS = Rated BVDSS, VGS = 0 VDS = x Rated BVDSS, VGS = 0, TC = 150oC VGS = ±10V, VDS = 0V ID = 50A, VGS = 5V Figure 7 ID = 50A, VGS = 4V VGS = 5V, RGS = RL = Figures 12, 15, 16 VGS = 0 to 10V VGS = 0 to 5V VGS = 0 to 1V VDD = 40V, ID = 50A RL = Figures 17, 18 Source to Drain Diode Specifications PARAMETER TEST CONDITIONS Source to Drain Diode Voltage Note 2

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Data Sheet

August 2004

RFP50N05L
50A, 50V, Ohm, Logic Level, N-Channel Power MOSFETs

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level 5V driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages.

Formerly developmental type TA09872.
Ordering Information

PACKAGE

BRAND

RFP50N05L

TO-220AB

F50N05L
NOTE When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RFP50N05L9A.

Packaging

JEDEC TO-220AB

DRAIN FLANGE

SOURCE DRAIN GATE
• 50A, 50V
• rDS ON =
• UIS SOA Rating Curve Single Pulse
• Design Optimized for 5V Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
2004 Fairchild Semiconductor Corporation

RFP50N05L

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage Note 1 VDS Drain to Gate Voltage RGS = Note 1 VDGR Continuous Drain Current ID

Pulsed Drain Current Note 3 .IDM Gate to Source Voltage VGS Maximum Power Dissipation PD

Above TC = 25oC, Derate Linearly Single Pulse Avalanche Energy Rating

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief 334 Tpkg

RFP50N05L 50 130 ±10 110

Refer to UIS SOA Curve -55 to 150
300 260

UNITS V A V W

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current Drain to Source On Resistance Note 2

Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 5V Threshold Gate Charge Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient

BVDSS VGS TH

IDSS

IGSS rDS ON
t ON tD ON
tr tD OFF
tf t OFF QG TOT QG 5 QG th

ID = 250µA, VGS = 0V Figure 10 VGS = VDS, ID = 250µA Figure 9 VDS = Rated BVDSS, VGS = 0 VDS = x Rated BVDSS, VGS = 0, TC = 150oC VGS = ±10V, VDS = 0V ID = 50A, VGS = 5V Figure 7 ID = 50A, VGS = 4V VGS = 5V, RGS = RL = Figures 12, 15, 16

VGS = 0 to 10V VGS = 0 to 5V VGS = 0 to 1V

VDD = 40V, ID = 50A RL = Figures 17, 18

Source to Drain Diode Specifications

PARAMETER

TEST CONDITIONS

Source to Drain Diode Voltage Note 2

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Datasheet ID: RFP50N05L 634672