PTFA092213ELV4R0XTMA1
PTFA092213ELV4R0XTMA1 Datasheet
PTFA092213EL PTFA092213FL
| Part | Datasheet |
|---|---|
PTFA092213ELV4R0XTMA1 |
PTFA092213ELV4R0XTMA1 (pdf) |
| Related Parts | Information |
|---|---|
PTFA092213FLV5R250XTMA1 |
PTFA092213FLV5R250XTMA1 |
PTFA092213FLV5XWSA1 |
PTFA092213FLV5XWSA1 |
| PDF Datasheet Preview |
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| Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 960 MHz PTFA092213EL PTFA092213FL The PTFA092213EL and PTFA092213FL are 220-watt, internally- PTFA092213EL matched LDMOS FETs designed for use in cellular power amplifier Package H-33288-6 applications in the 920 to 960 MHz band. These devices feature internal I/O matching and thermally-enhanced open-cavity ceramic packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. ign PTFA092213FL des Package H-34288-4/2 Gain dB , Drain Efficiency % IMD dBc , ACPR dBc w Two-carrier WCDMA Performance e VDD = 30 V, IDQ = 1850 mA, = 960 MHz, n 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, MHz Bandwidth for 40 d Gain e 20 Efficiency en 0 IMD_lower m -10 m -20 o -30 rec 30 IMD_upper ACPR Output Power dBm -20 -25 -30 -35 -40 -45 -50 -55 50 not RF Characteristics • Broadband internal matching • Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 50 W - Linear Gain = dB - Efficiency = 29% - Intermodulation distortion = dBc - Adjacent channel power = dBc • Typical CW performance, 960 MHz, 30 V - Output power at P1dB = 250 W - Linear Gain = dB - Efficiency = 52% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 30 V, 220 W CW output power • Pb-free, RoHS-compliant Two-carrier WCDMA Measurements not subject to production by design/characterization in Infineon test fixture VDD = 30 V, IDQ = 1850 mA, POUT = 50 W average, = 950 MHz, = 960 MHz, 3GPP signal, channel bandwidth = MHz, peak/average = 8 dB CCDF Characteristic Symbol Min Typ Unit Gain Drain Efficiency Intermodulation Distortion All published data at TCASE = 25°C unless otherwise indicated ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 10 PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution RF Characteristics cont. m Gate-Source Voltage o Junction Temperature ec Storage Temperature Range t r Thermal Resistance TCASE = 70 °C, 220 W CW no Ordering Information VDSS VGS TJ TSTG RqJC Value 65 to +12 200 to +150 Unit dB % dBc Unit V µA µA W V µA Unit V °C °C °C/W Type and Version PTFA092213EL V4 H-33288-6 PTFA092213EL V4 R250 H-33288-6 PTFA092213FL V5 H-34288-4/2 PTFA092213FL V5 R250 H-34288-4/2 Package Description Shipping Thermally-enhanced, slotted flange, single-ended Tray Thermally-enhanced, slotted flange, single-ended Tape & Reel, 250 pcs Thermally-enhanced, earless flange, single-ended Tray Thermally-enhanced, earless flange, single-ended Tape & Reel, 250 pcs Data Sheet 2 of 10 Confidential, Limited Internal Distribution Typical Performance PTFA092213EL PTFA092213FL Drain Efficiency % Gain dB CW Performance Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = A, = 960 MHz CW Performance Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = A, = 960 MHz 20 19 18 17 16 15 14 13 Gain Efficiency Output Power dBm Broadband Two-tone Drain Efficiency % Gain dB n 60 ig 50 s 40 de 30 w 20 e 10 n 0 ended for 55 TCASE = -10°C TCASE = 25°C |
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