KSK595HMTF

KSK595HMTF Datasheet

KSK595H

Part	Datasheet
KSK595HMTF	KSK595HMTF (pdf)

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KSK595H KSK595H Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 SOT-23 1.Drain Source Gate Si N-channel Junction FET Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VGDO IG ID PD TJ TSTG Gate-Drain Voltage Gate Current Drain Current Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVGDO VGS off IDSS lYFSl Ciss Crss Gate-Drain Breakdown Voltage Gate-Source Cut-off Voltage Drain Current Forward Transfer Admittance Input Capacitance Output Capacitance IG= -100uA VDS=5V, ID=1µA VDS=5V, VGS=0 VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz Ratings -20 10 1 100 150 -55 ~ 150 Min. -20 Typ. Units V mA mW °C °C Max. Units V µA ms pF 2002 Fairchild Semiconductor Corporation Typical Characteristics ID[µA], DRAIN CURRENT 500 450 400 350 300 250 200 150 100 IDSS = 200µA VGS = 0 VGS = -0.1V VGS = -0.2V VGS = -0.3V VGS = -0.4V VDS[V], DRAIN-SOURCE VOLTAGE Figure VDS = 5V ID = 1µA VGS off [V], GATE-SOURCE CUT-OFF VOLTAGE IDSS[mA], DRAIN CURRENT Figure V = 5V DS V =0 GS f=1kHz

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KSK595H

KSK595H

Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
2 SOT-23 1.Drain Source Gate

Si N-channel Junction FET

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VGDO IG ID PD TJ TSTG

Gate-Drain Voltage Gate Current Drain Current Power Dissipation Junction Temperature Storage Temperature

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVGDO VGS off IDSS lYFSl Ciss Crss

Gate-Drain Breakdown Voltage Gate-Source Cut-off Voltage Drain Current Forward Transfer Admittance Input Capacitance Output Capacitance

IG= -100uA VDS=5V, ID=1µA VDS=5V, VGS=0 VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz

Ratings -20 10 1 100 150
-55 ~ 150

Min. -20

Typ.

Units V mA
mW °C °C

Max.

Units V µA ms pF
2002 Fairchild Semiconductor Corporation

Typical Characteristics

ID[µA], DRAIN CURRENT
500 450 400 350 300 250 200 150 100

IDSS = 200µA

VGS = 0

VGS = -0.1V VGS = -0.2V VGS = -0.3V

VGS = -0.4V

VDS[V], DRAIN-SOURCE VOLTAGE

Figure

VDS = 5V ID = 1µA

VGS off [V], GATE-SOURCE CUT-OFF VOLTAGE

IDSS[mA], DRAIN CURRENT

Figure

V = 5V DS

V =0 GS
f=1kHz

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Datasheet ID: KSK595HMTF 634260