BSM 30 GD 60 DLC E3224
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BSM30GD60DLCE3224 (pdf) |
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Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 30 GD 60 DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current TC = 70°C TC = 25 °C Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 70°C Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. VCES IC,nom. ICRM Ptot VGES +/- 20V IFRM VISOL Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 30A, VGE = 15V, Tvj = 25°C IC = 30A, VGE = 15V, Tvj = 125°C Gate-Schwellenspannung gate threshold voltage IC = 0,7mA, VCE = VGE, Tvj = 25°C Eingangskapazität input capacitance f = 1MHz, Tvj = 25°C, VCE = 25V, VGE = 0V Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V VCE = 600V, VGE = 0V, Tvj = 25°C VCE = 600V, VGE = 0V, Tvj = 125°C VCE = 0V, VGE = 20V, Tvj = 25°C min. typ. max. 1,95 2,45 |
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