KSD73YTU

KSD73YTU Datasheet

KSD73

Part	Datasheet
KSD73YTU	KSD73YTU (pdf)

Related Parts	Information
KSD73O	KSD73O
KSD73Y	KSD73Y
KSD73YTSTU	KSD73YTSTU

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KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage VCBO = 100V • Collector Current IC = 5A • Collector Dissipation PC = 30W TC=25°C TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE VCE sat VBE sat fT VBE on Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Base-Emitter ON Voltage IC = 1mA, IE = 0 IC = 20mA, IB = 0 IE = 1mA, IC = 0 VCB = 100V, IE = 0 VCE = 10V, IC = 1.0A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A VCE = 10V, IC = 0.3A VCE = 10V, IE = 1.0A hFE Classification Classification hFE O 70 ~ 140 Value 100 60 5 30 150 - 55 ~ 150 Units V A W °C °C Min. 100 60 Typ. Max. 5 240 Units V mA V MHz V Y 120 ~ 240 2000 Fairchild Semiconductor International Typical Characteristics IC[A], COLLECTOR CURRENT VBE sat , VCE sat [V], SATURATION VOLTAGE IB = 14mA I = 12mA B I = 10mA I = 8mA I = 6mA B IB = 4mA I = 2mA

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KSD73

KSD73

Low Frequency High Power Amplifier
• Collector-Base Voltage VCBO = 100V
• Collector Current IC = 5A
• Collector Dissipation PC = 30W TC=25°C

TO-220
1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO hFE VCE sat VBE sat fT VBE on

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Base-Emitter ON Voltage

IC = 1mA, IE = 0 IC = 20mA, IB = 0 IE = 1mA, IC = 0 VCB = 100V, IE = 0 VCE = 10V, IC = 1.0A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A VCE = 10V, IC = 0.3A VCE = 10V, IE = 1.0A
hFE Classification

Classification hFE

O 70 ~ 140

Value 100 60
5 30 150 - 55 ~ 150

Units V A W °C °C

Min. 100 60

Typ.

Max.
5 240

Units V mA

V MHz V

Y 120 ~ 240
2000 Fairchild Semiconductor International

Typical Characteristics

IC[A], COLLECTOR CURRENT

VBE sat , VCE sat [V], SATURATION VOLTAGE

IB = 14mA

I = 12mA B

I = 10mA

I = 8mA

I = 6mA B

IB = 4mA

I = 2mA

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Datasheet ID: KSD73YTU 634248