KSC839CYTA
KSC839CYTA Datasheet
KSC839
| Part | Datasheet |
|---|---|
KSC839CYTA |
KSC839CYTA (pdf) |
| Related Parts | Information |
|---|---|
|
KSC839YBU |
KSC839YBU |
| PDF Datasheet Preview |
|---|
| KSC839 KSC839 FM/AM RADIO RF AMP, CONV, OSC, IF AMP • Current Gain Bandwidth Product fT=200MHz TO-92 Emitter Base Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Value 35 30 4 100 250 150 -55 ~ 150 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VBE on VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC=100µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=12V, IC=2mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz Min. 35 30 4 Typ. Max. Units V µA µA V MHz pF hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 2000 Fairchild Semiconductor International KSC839 Typical Characteristics Ic[mA], COLLECTOR CURRENT IB = 90µA IB = 80µA IB = 70µA IB = 60µA IB = 50µA |
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