BUZ31HXKSA1
BUZ31HXKSA1 Datasheet
BUZ 31 H
| Part | Datasheet |
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BUZ31HXKSA1 |
BUZ31HXKSA1 (pdf) |
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| SIPMOS Power Transistor BUZ 31 H • N channel • Enhancement mode • Avalanche-rated • Normal Level Pb-free lead plating RoHs compliant Halogen-free according to IEC61249-2-21 Type BUZ 31 H VDS 200 V RDS on Maximum Ratings Parameter Continuous drain current TC = 30 Pulsed drain current TC = 25 Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = A, VDD = 50 V, RGS = 25 L = mH, Tj = 25 Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation TC = 25 Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Pin 1 G Pin 2 D Package PG-TO-220-3 Pb-free Yes Pin 3 S Symbol ID IDpuls IAR EAR EAS Ptot Tj Tstg RthJC RthJA Values Unit ± 20 Class 1 -55 + 150 -55 + 150 55 / 150 / 56 2009-11-09 BUZ 31 H Electrical Characteristics, at Tj = unless otherwise specified Parameter min. |
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