KSC5302DTU
KSC5302DTU Datasheet
KSC5302D
| Part | Datasheet |
|---|---|
KSC5302DTU |
KSC5302DTU (pdf) |
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| KSC5302D KSC5302D High Voltage High Speed Power Switch Application Equivalent Circuit C • High Breakdown Voltage BVCBO=800V • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time spread • Even though corner spirit product • Low base drive requirement TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC *Collector Current Pulse Base Current DC *Base Current Pulse Power Dissipation TC=25°C Junction Temperature Storage Temperature Thermal Characteristics TC=25°C unless otherwise noted Characteristics Thermal Resistance Junction to Case Junction to Ambient Value 800 400 12 2 5 1 2 50 150 - 55 ~ 150 Units V A W °C °C Rating Unit °C/W 2001 Fairchild Semiconductor Corporation KSC5302D Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE sat Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage Output Capacitance Turn ON time tSTG Storage Time |
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