GWS9293
GWS9293 Datasheet
GWS9293
| Part | Datasheet |
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GWS9293 |
GWS9293 (pdf) |
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| DATASHEET Dual 20V N-Channel Power MOSFET GWS9293 The GWS9293 is a dual 20V, 16mΩ, N-channel power MOSFET used for Li ion battery protection. It is offered in a 2mmx2mm MLPD with a very low thickness profile, 1mm maximum thickness. The device has extremely high power density, reducing the board size of Li-ion battery power system. Designed for handheld devices with a high level of ESD protection. V BR DSS rDS ON PRODUCT SUMMARY ID = 250µA VGS = 4.5V 20V 16mΩ Minimum Typical • Low rDS ON in a small footprint • Ultra low gate charge and figure of merit • MLPD 2mmx2mm package • Low thermal resistance • Li-ion battery protection • Portable devices, cell phones, PDA • Rated for short-circuit and overcurrent protection • Integrated gate diodes provide ESD protection of 2.5kV HBM FET1 Gate1 Source1 FET2 Gate2 Source2 FIGURE EQUIVALENT CIRCUIT 3 G2 4 S2 G1 2 S1 1 FIGURE MLPD BOTTOM SIDE December 21, 2015 FN8785.1 CAUTION These devices are sensitive to electrostatic discharge follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC All Rights Reserved Intersil and design is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. Ordering Information GWS9293 Pin Configuration GWS9293 4 LD QFN BOTTOM VIEW GWS9293 PART MARKING 93 TEMP RANGE °C -55 to +150 PACKAGE RoHS Compliant 4 Ld QFN Pin Descriptions PIN # 1 2 3 4 PIN NAME S1 G1 G2 S2 DESCRIPTION Source of FET1 Gate of FET1 Gate of FET2 Source of FET2 Submit Document Feedback FN8785.1 December 21, 2015 GWS9293 Absolute Maximum Ratings Note 1 Drain-to-Source Voltage VDS 20V Gate-to-Source Voltage VGS ±12V Drain Current ID Note 2 TA = +25°C .9.4A 10s , 6.0A Steady State TA = +70°C 7.5A 10s , 4.8A Steady State Drain Current RthjFoot TF = +25°C .14.1A Steady State Pulsed Drain Current IDM 60A ESD Rating Human Body Model .2.5kV Thermal Information Thermal Resistance Typical °C/W °C/W Steady State Maximum Power Dissipation PD Note 2 TA = +25°C 3.6W 10s 1.47W Steady State TA = +70°C .2.29W 10s 0.94W Steady State Junction and Storage Temperature Range TJ, Tstg . .-55°C to +150°C Pb-Free Reflow Profile see TB493 CAUTION Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES TJ = +25°C unless otherwise noted. Surface mounted on FR4 board. Electrical Characteristics TJ = +25°C unless otherwise noted. PARAMETER TEST CONDITIONS Note 3 Note 4 Note 3 UNIT STATIC V BR DSS Drain-to-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate Body Leakage VGS th Gate Threshold Voltage rDS ON Drain-to-Source On-State Resistance Note 5 per MOSFET rSS ON Source-to-Source On-State Resistance Note 5 both MOSFETs in series VSD Source-to-Drain Diode Voltage DYNAMIC VGS = 0V, ID = 250µA VGS = 0V, VDS = 20V VDS = 0V VGS = ±8V VDS = VGS, ID = 1mA VGS = 4.5V, ID = 3A VGS = 4.0V, ID = 3A VGS = 3.1V, ID = 3A VGS = 2.5V, ID = 3A VGS = 4.5V, ISS = 3A VGS = 4.0V, ISS = 3A VGS = 3.1V, ISS = 3A VGS = 2.5V, ISS = 3A VGS = 0, IS = 6A ±10 µA |
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