IRGBC30F

IRGBC30F Datasheet

IRGBC30F

Part	Datasheet
IRGBC30F	IRGBC30F (pdf)

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INSULATED GATE BIPOLAR TRANSISTOR PD - 9.689A IRGBC30F Fast Speed IGBT • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve n-channel Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. VCES = 600V VCE sat 2.1V = 15V, IC = 17A Absolute Maximum Ratings VCES IC TC = 25°C IC TC = 100°C ICM ILM VGE EARV PD TC = 25°C PD TC = 100°C TJ TSTG TO-220AB Max. 600 31 17 120 ±20 10 100 42 -55 to +150 300 in. 1.6mm from case 10 lbf•in 1.1N•m Units V A V mJ W Thermal Resistance Parameter Junction-to-Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-57 Min. Typ. Max. 80 Units °C/W g oz IRGBC30F Electrical Characteristics TJ = 25°C unless otherwise specified V BR CES V BR ECS VCE on Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE th gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 600 V VGE = 0V, IC = 250µA 20 V VGE = 0V, IC = 1.0A V/°C VGE = 0V, IC = 1.0mA IC = 17A VGE = 15V V IC = 31A See Fig. 2, 5

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INSULATED GATE BIPOLAR TRANSISTOR

PD - 9.689A

IRGBC30F

Fast Speed IGBT
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency 1 to
10kHz See Fig. 1 for Current vs. Frequency curve
n-channel

Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.

VCES = 600V VCE sat 2.1V
= 15V, IC = 17A

Absolute Maximum Ratings

VCES IC TC = 25°C IC TC = 100°C ICM ILM VGE EARV PD TC = 25°C PD TC = 100°C TJ TSTG

TO-220AB

Max. 600 31 17 120 ±20 10 100 42 -55 to +150
300 in. 1.6mm from case 10 lbf•in 1.1N•m

Units V A

V mJ W

Thermal Resistance

Parameter Junction-to-Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight

C-57

Min.

Typ.

Max. 80

Units °C/W g oz

IRGBC30F

Electrical Characteristics TJ = 25°C unless otherwise specified

V BR CES V BR ECS VCE on

Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage

VGE th gfe ICES

Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current

IGES

Gate-to-Emitter Leakage Current

Min. Typ. Max. Units

Conditions
600 V VGE = 0V, IC = 250µA
20 V VGE = 0V, IC = 1.0A

V/°C VGE = 0V, IC = 1.0mA

IC = 17A

VGE = 15V

V IC = 31A

See Fig. 2, 5

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Datasheet ID: IRGBC30F 639060