KSC3074OTU

KSC3074OTU Datasheet

KSC3074

Part	Datasheet
KSC3074OTU	KSC3074OTU (pdf)

Related Parts	Information
KSC3074YTU	KSC3074YTU

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KSC3074 High Power Switching • Complement to KSA1244 KSC3074 I-PACK Base Collector Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature Value 60 50 5 1 20 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICBO IEBO hFE1 hFE2 VCE sat VBE sat fT Cob tON tSTG tF Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time IC = 10mA, IB = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 1V, IC = 1A VCE = 1V, IC = 3A IC= 3A, IB = 0.15A IC= 3A, IB = 0.15A VCE = 4V, IC = 1A VCB = 10V, f = 1MHz VCC = 30V, IC= 3A IB1= - I B2=0.15A RL = Min. 50 70 30 Typ. Max. 1 240 Units V µA µA hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 2000 Fairchild Semiconductor International Typical Characteristics IC[A], COLLECTOR CURRENT I B= 100mA I B = 90mA

PDF Datasheet Preview

KSC3074

High Power Switching
• Complement to KSA1244

KSC3074

I-PACK

Base Collector Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC IB PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Value 60 50 5 1 20
150 - 55 ~ 150

Units V A W °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCEO ICBO IEBO hFE1 hFE2 VCE sat VBE sat fT Cob tON tSTG tF

Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time

IC = 10mA, IB = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 1V, IC = 1A VCE = 1V, IC = 3A

IC= 3A, IB = 0.15A

IC= 3A, IB = 0.15A

VCE = 4V, IC = 1A

VCB = 10V, f = 1MHz

VCC = 30V, IC= 3A IB1= - I B2=0.15A RL =

Min. 50
70 30

Typ.

Max.
1 240

Units V µA µA
hFE Classification

Classification hFE1

O 70 ~ 140

Y 120 ~ 240
2000 Fairchild Semiconductor International

Typical Characteristics

IC[A], COLLECTOR CURRENT

I B= 100mA

I B = 90mA

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Datasheet ID: KSC3074OTU 634208