KSC3073OTU
KSC3073OTU Datasheet
KSC3073
| Part | Datasheet |
|---|---|
KSC3073OTU |
KSC3073OTU (pdf) |
| Related Parts | Information |
|---|---|
KSC3073YTU |
KSC3073YTU |
| PDF Datasheet Preview |
|---|
| KSC3073 KSC3073 Power Amplifier Application • Complement to KSA1243 I-PAK Base Collector Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature Value 30 5 3 1 15 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE sat VBE on fT Cob Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance IC = 10mA, IB = 0 IE = 1mA, IC = 0 VCB = 20V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 2.5A IC = 2A, IB = 0.2A VCE = 2V,IC = 0.5A VCE = 2V, IC = 0.5A VCB = 10V, f =1MHz Min. 30 5 70 25 Typ. Max. 1 240 Units V µA µA hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 2002 Fairchild Semiconductor Corporation Typical Characteristics IC[A], COLLECTOR CURRENT 40mA I B= 30mA I B = 20mA IB = 15mA IB = 10mA IB = 5mA IB = 3mA I =0 |
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