HGTP3N60A4

HGTP3N60A4 Datasheet

HGTD3N60A4S, HGTP3N60A4

Part	Datasheet
HGTP3N60A4	HGTP3N60A4 (pdf)

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Data Sheet HGTD3N60A4S, HGTP3N60A4 August 2003 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49327. Ordering Information PART NUMBER HGTD3N60A4S PACKAGE TO-252AA BRAND 3N60A4 HGTP3N60A4 TO-220AB 3N60A4 NOTE When ordering, use the entire part number. • >100kHz Operation at 390V, 3A • 200kHz Operation at 390V, 2.5A • 600V Switching SOA Capability • Typical Fall Time. 70ns at TJ = 125oC • 12mJ EAS Capability • Low Conduction Loss • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-252AA G E COLLECTOR FLANGE JEDEC TO-220AB COLLECTOR FLANGE FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606

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Data Sheet

HGTD3N60A4S, HGTP3N60A4

August 2003
600V, SMPS Series N-Channel IGBT

The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49327.
Ordering Information

PART NUMBER HGTD3N60A4S

PACKAGE TO-252AA

BRAND 3N60A4

HGTP3N60A4

TO-220AB
3N60A4
NOTE When ordering, use the entire part number.
• >100kHz Operation at 390V, 3A
• 200kHz Operation at 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. 70ns at TJ = 125oC
• 12mJ EAS Capability
• Low Conduction Loss
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Packaging

JEDEC TO-252AA

G E COLLECTOR FLANGE

JEDEC TO-220AB

COLLECTOR FLANGE

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606

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Datasheet ID: HGTP3N60A4 633895