APTC60DDAM70T3G

APTC60DDAM70T3G Datasheet


APTC60DDAM70T3G

Part Datasheet
APTC60DDAM70T3G APTC60DDAM70T3G APTC60DDAM70T3G (pdf)
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APTC60DDAM70T3G

Dual boost chopper Super Junction MOSFET

Power Module

VDSS = 600V RDSon = max Tj = 25°C ID = 39A Tc = 25°C
13 14

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
23 8 Q1
31 R1
32 16

Features

- Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged
• Kelvin source for easy drive
• Very low stray inductance - Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32
14 13 10 11 12

All multiple inputs and outputs must be shorted together Example 13/14 29/30 22/23

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a single boost of twice the current capability
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings Unit

VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current

Tc = 25°C

Tc = 80°C

IDM VGS RDSon

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance
±20

PD Maximum Power Dissipation

Tc = 25°C

IAR Avalanche current repetitive and non repetitive

EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
1800

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on

APTC60DDAM70T3G

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

IDSS Zero Gate Voltage Drain Current

RDS on VGS th IGSS

Drain Source on Resistance Gate Threshold Voltage Gate Source Leakage Current

Test Conditions
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Datasheet ID: APTC60DDAM70T3G 648711