APTC60DDAM70T3G
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APTC60DDAM70T3G (pdf) |
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APTC60DDAM70T3G Dual boost chopper Super Junction MOSFET Power Module VDSS = 600V RDSon = max Tj = 25°C ID = 39A Tc = 25°C 13 14 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 23 8 Q1 31 R1 32 16 Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 14 13 10 11 12 All multiple inputs and outputs must be shorted together Example 13/14 29/30 22/23 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±20 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1800 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTC60DDAM70T3G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS Zero Gate Voltage Drain Current RDS on VGS th IGSS Drain Source on Resistance Gate Threshold Voltage Gate Source Leakage Current Test Conditions |
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