KSC2883YTF
KSC2883YTF Datasheet
KSC2883 NPN Epitaxial Silicon Transistor
| Part | Datasheet |
|---|---|
KSC2883YTF |
KSC2883YTF (pdf) |
| Related Parts | Information |
|---|---|
KSC2883OTF |
KSC2883OTF |
| PDF Datasheet Preview |
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| KSC2883 NPN Epitaxial Silicon Transistor KSC2883 NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking November 2006 SOT-89 Base Collector Emitter Weekly code Year code hFE grage Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation 1,000 Junction Temperature TSTG Storage Temperature -55 ~ 150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Mounted on Ceramic Board 250mm2x0.8mm Electrical Characteristics * Ta = 25°C unless otherwise noted Parameter Test Condition BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current DC Current Gain Package Marking and Ordering Information Device Marking 2883 Device KSC2883 Package SOT-89 Reel Size 13” 160 ~ 320 Tape Width Quantity 4,000 KSC2883 NPN Epitaxial Silicon Transistor Typical Performance Characteristics Figure Static Characteristic IC [A], COLLECTOR CURRENT IB = 10mA IB = 8mA IB = 6mA IB = 5mA IB = 4mA IB = 3mA IB = 2mA IB = 1mA VCE [V], COLLECTOR-EMITTER VOLTAGE Figure Base-Emitter On Voltage V = 2V I [A], COLLECTOR CURRENT V [V], Turn On VOLTAGE BE Figure DC Current Gain 10000 1000 VCE = 2V Figure Collector-Emitter Saturation Voltage Ic=10*Ib VCE , Collector-Emitter Voltage V SAT hFE, DC CURRENT GAIN 1000 10000 IC[mA], COLLECTOR CURRENT 1000 I [mA], COLLECTOR CURRENT Figure Safe Operating Area Figure Power Derating |
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