KSC2751RTU
KSC2751RTU Datasheet
KSC2751
| Part | Datasheet |
|---|---|
KSC2751RTU |
KSC2751RTU (pdf) |
| PDF Datasheet Preview |
|---|
| KSC2751 KSC2751 High Speed High Current Switching Industrial Use NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current DC *Collector Current Pulse Base Current DC Collector Dissipation TC=25°C Junction Temperature TSTG Storage Temperature * Duty TO-3P 1.Base 2.Collector 3.Emitter Value 500 400 7 15 30 120 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition Min Typ Max Units VCEO sus Collector-Emitter Sustaining Voltage IC = 10A, IB1= 2A, L = 50µH VCEX sus 1 Collector-Emitter Sustaining Voltage IC = 10A, IB1= -IB2 = 2A TC =125°C, l = 180µH, Clamped VCEX sus 2 Collector-Emitter Sustaining Voltage IC = 20A, IB1 = 4A, -IB2 = 2A TC= 125°C, L = 180µH,Clamped ICBO Collector Cut-off Current VCB = 400V, IE = 0 100 µA ICER Collector Cut-off Current VCE = 400V, RBE = TC = 125°C |
| More datasheets: MX29GL640EBTI-70Q | MX29GL640EBTI-90G | MX29GL640EBXEI-70G | MX29GL640ETXEI-70G | FRX450 | QPA8259 | LX2207 EVAL KIT | DEMAME-9S | PEB22504HT-V11 | 10050 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived KSC2751RTU Datasheet file may be downloaded here without warranties.