KSB1121STM
KSB1121STM Datasheet
KSB1121 PNP Epitaxial Planar Silicon Transistor
| Part | Datasheet |
|---|---|
KSB1121STM |
KSB1121STM (pdf) |
| Related Parts | Information |
|---|---|
KSB1121STF |
KSB1121STF |
KSB1121TTF |
KSB1121TTF |
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| KSB1121 PNP Epitaxial Planar Silicon Transistor July 2005 KSB1121 PNP Epitaxial Planar Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity • Fast Switching Speed • Complement to KSD1621 Marking SOT-89 Base Collector Emitter 11 PY Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature TSTG Storage Temperature * Mounted on Ceramic Board 250mm2 x 0.8mm Electrical Characteristics Ta = 25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE sat VBE sat Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = -10µA, IE = 0 IC = -1mA, IB = 0 IE = -10µA, IC = 0 VCB = -20V, IE = 0 VBE = -4V, IC = 0 VCE = -2V, IC = -0.1A VCE = -2V, IC = -1.5A IC = -1.5A, IB = -75mA IC = -1.5A, IB = -75mA Weekly code Year code hFE grage Ratings -30 -25 -6 -2 500 150 -55 ~ 150 Units V A mW W °C °C Min. -30 -25 -6 100 65 Typ. Max. Package Marking and Ordering Information Device Marking Device Package Reel Size 1121 KSB1121 SOT-89 13” Min. Typ. 150 32 60 350 25 200 ~ 400 Tape Width Max. Units MHz pF ns 280 ~ 560 Quantity 4,000 KSB1121 PNP Epitaxial Planar Silicon Transistor Typical Performance Characteristics Figure Static Characteristic Figure DC Current Gain IC[A], COLLECTOR CURRENT IB = -200mA IB = -100mA IB = -50mA IB = -30mA IB = -20mA IB = -10mA IB = -8mA IB = -6mA IB = -4mA IB = -2mA IB = 0 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure Collector-Emitter Saturation Voltage 1000 100 VCE= -2V hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT Figure Base-Emitter On Voltage VCE sat [V], SATURATION VOLTAGE IC = 10 IB IC[A], COLLECTOR CURRENT Figure Collector Output Capacitance 1000 |
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