APTGT100DA120D1G

APTGT100DA120D1G Datasheet

APTGT100DA120D1G

Part	Datasheet
APTGT100DA120D1G	APTGT100DA120D1G (pdf)

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APTGT100DA120D1G Boost chopper Trench + Field Stop IGBT Power Module VCES = 1200V IC = 100A Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M5 power connectors Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 IC Continuous Collector Current TC = 25°C TC = 80°C ICM Pulsed Collector Current TC = 25°C VGE Gate Emitter Voltage ±20 PD Maximum Power Dissipation TC = 25°C Tj = 125°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGT100DA120D1G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE on Collector Emitter on Voltage VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current Test Conditions Min Typ Max Unit VGE = 0V, VCE = 1200V VGE = 15V IC = 100A Tj = 25°C V Tj = 125°C VGE = VCE , IC = 4mA VGE = 20V, VCE = 0V V 300 nA Dynamic Characteristics QG Gate charge Td on Tr Td off Tf

PDF Datasheet Preview

APTGT100DA120D1G

Boost chopper Trench + Field Stop IGBT

Power Module

VCES = 1200V IC = 100A Tc = 80°C

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction

Features
• Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• High level of integration
• M5 power connectors

Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings Unit

VCES Collector - Emitter Breakdown Voltage
1200

IC Continuous Collector Current

TC = 25°C

TC = 80°C

ICM Pulsed Collector Current

TC = 25°C

VGE Gate Emitter Voltage
±20

PD Maximum Power Dissipation

TC = 25°C

Tj = 125°C

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGT100DA120D1G

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic ICES Zero Gate Voltage Collector Current

VCE on Collector Emitter on Voltage

VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current

Test Conditions

Min Typ Max Unit

VGE = 0V, VCE = 1200V

VGE = 15V IC = 100A

Tj = 25°C V

Tj = 125°C

VGE = VCE , IC = 4mA VGE = 20V, VCE = 0V

V 300 nA

Dynamic Characteristics

QG Gate charge

Td on Tr

Td off Tf

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Datasheet ID: APTGT100DA120D1G 648806