KSB1022TU
KSB1022TU Datasheet
KSB1022
| Part | Datasheet |
|---|---|
KSB1022TU |
KSB1022TU (pdf) |
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| KSB1022 KSB1022 High Power Switching Applications • High DC Current Gain • Low Collector-Emitter Saturation Voltage • Complement to KSD1417 TO-220F 1.Base 2.Collector 3.Emitter PNP Silicon Darlington Transisto Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature Value - 60 - 60 -5 -7 - 10 - 2 30 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICBO IEBO hFE1 hFE2 VCE sat VBE sat tON tSTG tF Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time IC = - 50mA, IB = 0 VCB = - 60V, IE = 0 VEB = - 5V, IC = 0 VCE = - 3V, IC = - 3A VCE = - 3V, IC = - 7A IC = - 3A, IB = - 6mA IC = - 7A, IB = - 14mA IC = - 3A, IB = - 6mA VCC = - 45V, IC = - 3A IB1 = - IB2 = - 6mA RL = Min. - 60 2000 1000 Typ. Max. - 100 -4 15000 Units V µA mA 2000 Fairchild Semiconductor International Typical Characteristics IC[A], COLLECTOR CURRENT IB = -2.5mA IB = -2mA IB = -1.5mA |
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