SGF40N60UFTU

SGF40N60UFTU Datasheet

SGF40N60UF

Part	Datasheet
SGF40N60UFTU	SGF40N60UFTU (pdf)

PDF Datasheet Preview
SGF40N60UF SGF40N60UF Ultra-Fast IGBT October 2001 IGBT Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required. • High Speed Switching • Low Saturation Voltage VCE sat = V IC = 20A • High Input Impedance Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls TO-3PF Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 PD TJ Tstg Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient SGF40N60UF 600 ± 20 40 20 160 100 40 -55 to +150 -55 to +150 Typ. --- Max. 40 Units V A W °C °C °C Units °C/W °C/W 2001 Fairchild Semiconductor Corporation SGF40N60UF Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics

PDF Datasheet Preview

SGF40N60UF

SGF40N60UF

Ultra-Fast IGBT

October 2001

IGBT

Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required.
• High Speed Switching
• Low Saturation Voltage VCE sat = V IC = 20A
• High Input Impedance

Application

AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls

TO-3PF

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 PD

TJ Tstg

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Collector Current Pulsed Collector Current

TC = 25°C TC = 100°C

Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25°C TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

SGF40N60UF 600 ± 20 40 20 160 100 40
-55 to +150 -55 to +150

Typ. ---

Max. 40

Units V A W °C °C °C

Units °C/W °C/W
2001 Fairchild Semiconductor Corporation

SGF40N60UF

Electrical Characteristics of IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

On Characteristics

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SGF40N60UFTU Datasheet file may be downloaded here without warranties.

Datasheet ID: SGF40N60UFTU 634741