KSA1241
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KSA1241YTU (pdf) |
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KSA1241 KSA1241 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage • Complement to KSC3076 I-PACK Base Collector Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IB IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature Ratings - 55 - 50 -5 -1 -2 1 10 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICBO IEBO hFE1 hFE2 VCE sat VBE sat fT Cob tON tSTG tF Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time IC = - 10mA, IB = 0 VCB = - 50V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 1.5A IC = - 1A, IB = - 0.05A IC = - 1A, IB = - 0.05A VCE = - 2V, IC = - 0.5A VCB = - 10V, f = 1MHz VCC = - 30, IC = - 1A IB1 = - IB2 = - 0.05A RL = Min. - 50 70 40 Typ. 100 40 1 Max. -1 -1 240 Units V µA µA V MHz pF µs µs µs hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 2000 Fairchild Semiconductor International KSA1241 Package Demensions |
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