KSA1241YTU

KSA1241YTU Datasheet


KSA1241

Part Datasheet
KSA1241YTU KSA1241YTU KSA1241YTU (pdf)
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KSA1241

KSA1241

Power Amplifier Applications
• Low Collector-Emitter Saturation Voltage
• Complement to KSC3076

I-PACK

Base Collector Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IB IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Ratings - 55 - 50 -5 -1 -2 1 10 150
- 55 ~ 150

Units V A W °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCEO ICBO IEBO hFE1 hFE2 VCE sat VBE sat fT Cob tON tSTG tF

Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time

IC = - 10mA, IB = 0 VCB = - 50V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 1.5A

IC = - 1A, IB = - 0.05A

IC = - 1A, IB = - 0.05A

VCE = - 2V, IC = - 0.5A

VCB = - 10V, f = 1MHz

VCC = - 30, IC = - 1A IB1 = - IB2 = - 0.05A RL =

Min. - 50
70 40

Typ.
100 40 1

Max.
-1 -1 240

Units V µA µA

V MHz pF µs µs µs
hFE Classification

Classification hFE1

O 70 ~ 140

Y 120 ~ 240
2000 Fairchild Semiconductor International

KSA1241

Package Demensions
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Datasheet ID: KSA1241YTU 634149