IRGP4078DPBF

IRGP4078DPBF Datasheet

IRGP4078DPbF IRGP4078D-EP

Part	Datasheet
IRGP4078DPBF	IRGP4078DPBF (pdf)

Related Parts	Information
IRGP4078D-EPBF	IRGP4078D-EPBF

PDF Datasheet Preview
IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA • Square RBSOA • 100% of the parts tested for • Positive VCE ON Temperature co-efficient • Ultra-low VF Hyperfast Diode • Tight parameter distribution n-channel VCES = 600V IC = 50A, TC =100°C TJ MAX = 175°C VCE ON typ. = 1.9V Benefits • Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE ON , Low Switching Losses and Ultra-low VF • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI IRGP4078DPbF TO-247AC IRGP4078D-EP TO-247AD G Gate C Collector E Emitter Base part number IRGP4078DPbF IRGP4078D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube Tube Orderable Part Number IRGP4078DPbF IRGP4078D-EPbF Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC TC = 25°C Continuous Collector Current IC TC = 100°C Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V IF TC = 25°C Diode Continuous Forward Current IF TC = 100°C Diode Continuous Forward Current IFSM TC = 25°C Diode Non Repetitive Peak Surge Current TJ = IFRM = 100°C Diode Repetitive Peak Forward Current at tp=10µs  Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD TC = 25°C Maximum Power Dissipation

PDF Datasheet Preview

IRGP4078DPbF IRGP4078D-EP

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE

FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

Features
• Low VCE ON Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175°C
• 5 µs short circuit SOA
• Square RBSOA
• 100% of the parts tested for
• Positive VCE ON Temperature co-efficient
• Ultra-low VF Hyperfast Diode
• Tight parameter distribution
n-channel

VCES = 600V IC = 50A, TC =100°C

TJ MAX = 175°C VCE ON typ. = 1.9V

Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE ON , Low Switching Losses
and Ultra-low VF
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI

IRGP4078DPbF TO-247AC

IRGP4078D-EP TO-247AD

G Gate

C Collector

E Emitter

Base part number

IRGP4078DPbF IRGP4078D-EPbF

Package Type

TO-247AC TO-247AD

Standard Pack

Form

Quantity

Tube

Tube

Orderable Part Number

IRGP4078DPbF IRGP4078D-EPbF

Absolute Maximum Ratings

Parameter

VCES

Collector-to-Emitter Voltage

IC TC = 25°C Continuous Collector Current

IC TC = 100°C Continuous Collector Current

Pulse Collector Current, VGE = 15V

Clamped Inductive Load Current, VGE = 20V

IF TC = 25°C Diode Continuous Forward Current

IF TC = 100°C Diode Continuous Forward Current

IFSM TC = 25°C Diode Non Repetitive Peak Surge Current TJ =

IFRM = 100°C Diode Repetitive Peak Forward Current at tp=10µs 

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

PD TC = 25°C Maximum Power Dissipation

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Datasheet ID: IRGP4078DPBF 638345