IRGP4078D-EPBF
IRGP4078D-EPBF Datasheet
IRGP4078DPbF IRGP4078D-EP
| Part | Datasheet |
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IRGP4078D-EPBF |
IRGP4078D-EPBF (pdf) |
| Related Parts | Information |
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IRGP4078DPBF |
IRGP4078DPBF |
| PDF Datasheet Preview |
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| IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA • Square RBSOA • 100% of the parts tested for • Positive VCE ON Temperature co-efficient • Ultra-low VF Hyperfast Diode • Tight parameter distribution n-channel VCES = 600V IC = 50A, TC =100°C TJ MAX = 175°C VCE ON typ. = 1.9V Benefits • Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE ON , Low Switching Losses and Ultra-low VF • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI IRGP4078DPbF TO-247AC IRGP4078D-EP TO-247AD G Gate C Collector E Emitter Base part number IRGP4078DPbF IRGP4078D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube Tube Orderable Part Number IRGP4078DPbF IRGP4078D-EPbF Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC TC = 25°C Continuous Collector Current IC TC = 100°C Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V IF TC = 25°C Diode Continuous Forward Current IF TC = 100°C Diode Continuous Forward Current IFSM TC = 25°C Diode Non Repetitive Peak Surge Current TJ = IFRM = 100°C Diode Repetitive Peak Forward Current at tp=10µs Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD TC = 25°C Maximum Power Dissipation |
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