J304_D26Z
J304_D26Z Datasheet
J304
| Part | Datasheet |
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J304_D26Z |
J304_D26Z (pdf) |
| Related Parts | Information |
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J304 |
J304 |
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| J304 J304 N-Channel RF Amplifier • This device is designed for electronic switching applications such as low ON resistance analog switching. • Sourced from process TO-92 Drain Source Gate NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwise noted Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TJ, TSTG Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Ratings 30 -30 10 -55 ~ 150 NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units Off Characteristics V BR GSS Gate-Source Breakdwon Voltage IG = -1.0µA, VDS = 0 IGSS VGS = -20V, VDS = 0 VGS off Gate-Source Cutoff Voltage VDS = 15V, ID = 1.0nA On Characteristics -100 IDSS gfs goss Zero-Gate Voltage Drain Current Forward Transconductance Output Conductance VDS = 15V, VGS = 0 VGS = 0V, VDS = 15V, f = 1KHz VGS= 0V, VDS = 15V, f = 1KHz 4500 7500 µS Thermal Characteristics TA=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C |
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