MPSW06
MPSW06 Datasheet
MPSW06
| Part | Datasheet |
|---|---|
MPSW06 |
MPSW06 (pdf) |
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| MPSW06 MPSW06 Discrete POWER & Signal Technologies TO-226 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process See MPSA06 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSW06 125 *Device mounted on FR-4 PCB X **Device mounted on FR-4 PCB 36 mm X 18 mm X mm mounting pad for the collector lead min. 6 cm2. Units V mA °C Units W mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation MPSW06 NPN General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted |
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