ISL9V2540S3S

ISL9V2540S3S Datasheet

ISL9V2540S3S N-Channel Ignition IGBT

Part	Datasheet
ISL9V2540S3S	ISL9V2540S3S (pdf)

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ISL9V2540S3S N-Channel Ignition IGBT June 2005 ISL9V2540S3S EcoSPARKTM N-Channel Ignition IGBT 250mJ, 400V ! SCIS Energy = 250mJ at TJ = 25oC ! Logic Level Gate Drive ! Automotive Ignition Coil Driver Circuits ! Coil - On Plug Applications The ISL9V2540S3S is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard TO-263 plastic package. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components. EcoSPARK devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. Package GATE EMITTER COLLECTOR FLANGE JEDEC TO-263AB D2-Pak R1 GATE COLLECTOR EMITTER ISL9V2540S3S N-Channel Ignition IGBT Device Maximum Ratings TA = 25°C unless otherwise noted Symbol BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ TSTG TL Tpkg ESD Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C Operating Junction Temperature Range Storage Junction Temperature Range Max Lead Temp for Soldering Leads at 1.6mm from Case for 10s Max Lead Temp for Soldering Package Body for 10s Electrostatic Discharge Voltage at 100pF, HBM Ratings 430 24 250 150 ±10 -40 to 175 -40 to 175 300 260 Units V mJ A V W W/°C °C °C °C °C kV Package Marking and Ordering Information Device Marking V2540S Device ISL9V2540S3ST ISL9V2540S3S Package TO-263AB TO-263AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Off State Characteristics BVCER BVCES BVECS BVGES ICER IECS R1 R2 Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = See Fig. 15 TJ = -40 to 150°C Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150°C Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V, TC = 25°C Gate to Emitter Breakdown Voltage IGES = ± 2mA ±12 Collector to Emitter Leakage Current VCER = 250V, TC = 25°C TC = 150°C - See Fig. 11 Emitter to Collector Leakage Current VEC = 24V, See TC = 25°C Fig. 11 TC = 150°C - Series Gate Resistance Gate to Emitter Resistance On State Characteristics VCE SAT Collector to Emitter Saturation Voltage IC = 6A, TC = 25°C, VGE = 4V See Fig. 3 VCE SAT Collector to Emitter Saturation Voltage IC = 10A,

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ISL9V2540S3S N-Channel Ignition IGBT

June 2005

ISL9V2540S3S EcoSPARKTM N-Channel Ignition IGBT
250mJ, 400V
! SCIS Energy = 250mJ at TJ = 25oC ! Logic Level Gate Drive
! Automotive Ignition Coil Driver Circuits ! Coil - On Plug Applications

The ISL9V2540S3S is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard TO-263 plastic package. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components.

EcoSPARK devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information.

Package

GATE

EMITTER

COLLECTOR FLANGE

JEDEC TO-263AB D2-Pak

R1 GATE

COLLECTOR EMITTER

ISL9V2540S3S N-Channel Ignition IGBT

Device Maximum Ratings TA = 25°C unless otherwise noted

Symbol BVCER BVECS ESCIS25 ESCIS150

IC25 IC110 VGEM PD

TJ TSTG

TL Tpkg ESD

Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C Operating Junction Temperature Range

Storage Junction Temperature Range

Max Lead Temp for Soldering Leads at 1.6mm from Case for 10s

Max Lead Temp for Soldering Package Body for 10s Electrostatic Discharge Voltage at 100pF, HBM

Ratings 430 24 250 150 ±10
-40 to 175 -40 to 175
300 260

Units V mJ A V W

W/°C °C °C °C °C kV
Package Marking and Ordering Information

Device Marking V2540S

Device ISL9V2540S3ST ISL9V2540S3S

Package TO-263AB TO-263AB

Reel Size 330mm Tube

Tape Width 24mm N/A

Quantity 800 units 50 units

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Test Conditions

Off State Characteristics

BVCER

BVCES

BVECS BVGES

ICER

IECS R1 R2

Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0,

RG = See Fig. 15

TJ = -40 to 150°C

Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0,

RG = 0, See Fig. 15

TJ = -40 to 150°C

Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V,

TC = 25°C

Gate to Emitter Breakdown Voltage

IGES = ± 2mA
±12

Collector to Emitter Leakage Current VCER = 250V, TC = 25°C

TC = 150°C -

See Fig. 11

Emitter to Collector Leakage Current VEC = 24V, See TC = 25°C

Fig. 11

TC = 150°C -

Series Gate Resistance

Gate to Emitter Resistance

On State Characteristics

VCE SAT Collector to Emitter Saturation Voltage IC = 6A,

TC = 25°C,

VGE = 4V

See Fig. 3

VCE SAT Collector to Emitter Saturation Voltage IC = 10A,

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Datasheet ID: ISL9V2540S3S 634086