Using the IDT CMOS oscillator technology, originally developed by Mobius Microsytems, the 3C02 replaces quartz crystal based resonators and oscillators with a monolithic CMOS IC at the thinnest possible form factors without the use of any mechanical frequency source or PLL. The product is specially designed to work with the next generation USB Super Speed, Gen1/2 and S-ATA interface controller ICs and systems.
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PDF Datasheet Preview |
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CMOS Oscillator 3C02 PRELIMINARY DATA SHEET Using the IDT CMOS oscillator technology, originally developed by Mobius Microsytems, the 3C02 replaces quartz crystal based resonators and oscillators with a monolithic CMOS IC at the thinnest possible form factors without the use of any mechanical frequency source or PLL. The product is specially designed to work with the next generation USB Super Speed, Gen1/2 and S-ATA interface controller ICs and systems. • All-CMOS Temperature Compensated Oscillator • Excellent Frequency Accuracy +/- 100ppm total • Ultra-low power operation 2mA typical at 1.8V supply • No quartz or PLL used very low jitter performance leading to low link Bit Error Rates BER • Excellent reliability Shock and vibration resistant • Many frequencies are supported • Factory programmable from 6 to 133MHz Ordering Information Pin Assignment 3C P 0 C 02 - FFF NSG X 8 1 2 3 4 5 6 7 89 1 IDT Base Part Number for 100ppm CMOS Oscillator 2 Supply Voltage Configuration P 1.8V to 3.3V continuous operation 3 Output Signal Type 0 LVCMOS Output 4 “C” indicates integrated CMOS Oscillator 5 “XX” is product specific code that indicated product sequence 6 FFF Factory Programmed Frequency in MHz 7 Package Options* NSG 5x3.2, 4-Pin Package NVG 2.5x2.0, 4-Pin Package2 M SOIC, 8-pin Package2 Table Pin Descriptions 8 Temperature Grade “E” -20 to 70oC Extended Commercial Temperature Range “ “ 0 to 70oC Commercial Temperature Range,ie. default is blank2 “R” -20 to 85oC Restricted Industrial Temperature Range2 9 Tape & Reel Option “ “ Shipped in Tube i.e. default is blank No Name Type Input Pullup Chip Enable. Internal Pullup. 3C02 is enabled when HIGH. When LOW, OUT has a weak pull-down to GND internally 8 Shipped in Tape & Reel 2 VSS Power System Ground 1 :This product is rated “Green”, please contact factory for environmental compliancy information 2 Future product. Not available for design-in. Please contact your IDT representative for 4 details OUT VDD Output Frequency Output Power Supply. Use a 0.1µF decoupling capacitor between VDD and VSS The Preliminary Information presented herein represents a product in pre-production. The noted characteristics are based on initial product characterization and/or qualification. Integrated Device Technology, Incorporated IDT reserves the right to change any circuitry or specifications without notice 2010 Integrated Device Technology, Inc. 3C02 Preliminary Data Sheet Table Pin Descriptions Below Pin Descriptions apply to SOIC-8 Package Name Type 2,3,5,7 NC 3C02 is a monolithic all-CMOS frequency source. The internal CMOS Oscillator generates the factory-programmed frequencies with high accuracy and excellent phase noise and jitter. The device is a silicon alternative to quartz based crystal resonators and oscillators. Various programming and configuration options are supported as given in the Part Ordering Information section above. The easy-to-use device offers programmable frequencies and various supply voltage configurations. Offered in common crystal oscillator pin-outs, the 3C02 allows the designer to disable the oscillator via the CE pin to enter a very low current, quiescent state. The CMOS oscillator features very fast start-up time to enable rapid wake-up from the quiescent state. All required circuit elements other than those that are noted in the Pin Descriptions Table.1 above are internal to the device. 2010 Integrated Device Technology, Inc. 3C02 Preliminary Data Sheet Absolute Maximum Ratings CMOS OSCILLATOR NOTE Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. Item Rating Supply Voltage, VDD Input, VI CE pin Output, VO OUT pin Storage Temperature Electrical Characteristics5 [3.3V] 4.6V -0.5V to VDD + 0.5V -0.5V to VDD + 0.5V -65oC to 150oC VDD=3.0V to 3.6V, TA=-20 to 70oC unless otherwise noted. Typical values are measured at VDD=3.3V, TA=35oC Parameter Conditions ElectroStaticDischa rge Supply Voltage Input LOW level Input HIGH level Supply Current Quiescent Current Output LOW level Output HIGH level Output Frequency Frequency Stability Rise Time Fall Time Duty Cycle Power-up time Period Jitter Cycle-cycle Jitter Phase Noise ESD VDD VIL VIH IDD IDDQ VOL VOH FOUT FTOT RT FT PJRMS CJ PN Human Body Model, tested per JESD D22-A114 Normal Operation3 CE pin CE pin Active supply current, VDD=3.3V, T=35oC, no output load CE=LOW, output disabled IOL = -4mA IOH = 4mA Factory Programmable.Contact IDT for frequencies not listed Total Frequency Stability over temperature,supply variation,aging 1st year at 35oC ,shock&vibration. “E” device option, over -20 to 70oC range 20% to 80% x VDD. Output load CL =8pF, NSG-option 80% to 20% x VDD. Output load CL =8pF, NSG-option Clock output duty cycle. Measured under 80MHz, VDD/2, CL=8pF Clock output duty cycle. Measured over 80MHz, VDD/2, CL=8pF Output valid time after VDD meets the specified range&CE transition Total RMS Period Jitter including random and deterministic 1,2 |
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