ISL9R460P2

ISL9R460P2 Datasheet

ISL9R460P2, ISL9R460S2, ISL9R460S3S

Part	Datasheet
ISL9R460P2	ISL9R460P2 (pdf)

Related Parts	Information
ISL9R460S3ST	ISL9R460S3ST

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ISL9R460P2, ISL9R460S2, ISL9R460S3S July 2003 ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth Diode This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49408. • Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD • Snubber Diode Package JEDEC TO-220AC JEDEC STYLE TO-262 JEDEC TO-263AB CATHODE FLANGE ANODE CATHODE ANODE CATHODE CATHODE FLANGE CATHODE FLANGE ANODE Device Maximum Ratings TC= 25°C unless otherwise noted Parameter Ratings Units VRRM VRWM VR IF AV IFRM IFSM PD EAVL TJ, TSTG TL TPKG Leads at 0.063in 1.6mm from Case for 10s Package Body for 10s, See Techbrief TB334 -55 to 175 CAUTION Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 2003 Fairchild Semiconductor Corporation ISL9R460P2, ISL9R460S2, ISL9R460S3S Package Marking and Ordering Information Device Marking R460P2 R460S2 R460S3S Device ISL9R460P2 ISL9R460S2 ISL9R460S3S ISL9R460S3ST Package TO-220AC TO-262 TO-263AB TO-263AB Tape Width N/A N/A N/A 24mm Quantity 50 800 Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off State Characteristics VR = 600V TC = 25°C TC = 125°C - 100 µA On State Characteristics VF Instantaneous Forward Voltage IF = 4A TC = 25°C TC = 125°C - V - V Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A Switching Characteristics IF = 1A, dIF/dt = 100A/µs, VR = 30V 17 20 ns IF = 4A, dIF/dt = 100A/µs, VR = 30V 19 22 ns trr IRRM QRR IF = 4A, dIF/dt = 200A/µs, VR = 390V, TC = 25°C trr S IRRM QRR IF = 4A, dIF/dt = 200A/µs, VR = 390V, TC = 125°C - 100 - trr S IRRM QRR IF = 4A, dIF/dt = 400A/µs, VR = 390V, TC = 125°C 110 - dIM/dt Maximum di/dt during tb - 500 - A/µs

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ISL9R460P2, ISL9R460S2, ISL9R460S3S

July 2003

ISL9R460P2, ISL9R460S2, ISL9R460S3S
4A, 600V Stealth Diode

This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.

Formerly developmental type TA49408.
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode

Package

JEDEC TO-220AC

JEDEC STYLE TO-262

JEDEC TO-263AB

CATHODE FLANGE

ANODE CATHODE

ANODE CATHODE

CATHODE FLANGE

CATHODE FLANGE

ANODE

Device Maximum Ratings TC= 25°C unless otherwise noted

Parameter

Ratings

Units

VRRM VRWM

VR IF AV IFRM IFSM

PD EAVL TJ, TSTG

TL TPKG

Leads at 0.063in 1.6mm from Case for 10s Package Body for 10s, See Techbrief TB334
-55 to 175

CAUTION Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
2003 Fairchild Semiconductor Corporation

ISL9R460P2, ISL9R460S2, ISL9R460S3S
Package Marking and Ordering Information

Device Marking R460P2 R460S2 R460S3S

Device ISL9R460P2 ISL9R460S2 ISL9R460S3S ISL9R460S3ST

Package TO-220AC

TO-262 TO-263AB TO-263AB

Tape Width N/A N/A N/A
24mm

Quantity 50 800

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off State Characteristics

VR = 600V

TC = 25°C TC = 125°C
- 100 µA

On State Characteristics

VF Instantaneous Forward Voltage

IF = 4A

TC = 25°C TC = 125°C
- V - V

Dynamic Characteristics

CJ Junction Capacitance

VR = 10V, IF = 0A

Switching Characteristics

IF = 1A, dIF/dt = 100A/µs, VR = 30V
17 20 ns

IF = 4A, dIF/dt = 100A/µs, VR = 30V
19 22 ns
trr IRRM QRR

IF = 4A, dIF/dt = 200A/µs, VR = 390V, TC = 25°C
trr S

IRRM QRR

IF = 4A, dIF/dt = 200A/µs, VR = 390V, TC = 125°C
- 100 -
trr S

IRRM QRR

IF = 4A, dIF/dt = 400A/µs, VR = 390V, TC = 125°C
110 -
dIM/dt Maximum di/dt during tb
- 500 - A/µs

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Datasheet ID: ISL9R460P2 634085