SGS10N60RUFTU

SGS10N60RUFTU Datasheet

SGS10N60RUF

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SGS10N60RUFTU	SGS10N60RUFTU (pdf)

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SGS10N60RUF SGS10N60RUF Short Circuit Rated IGBT April 2001 IGBT Fairchild's RUF series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies UPS and general inverters where short circuit ruggedness is a required feature. • Short circuit rated 10us TC = 100°C, VGE = 15V • High speed switching • Low saturation voltage VCE sat = V IC = 10A • High input impedance Application AC & DC Motor controls, general purpose inverters, robotics, servo controls TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 TSC PD TJ Tstg Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds TC = 25°C TC = 100°C TC = 100°C TC = 25°C TC = 100°C Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient SGS10N60RUF 600 ± 20 16 10 30 10 55 22 -55 to +150 -55 to +150 Typ. --- Max. Units V A µs W °C °C °C Units °C/W °C/W 2001 Fairchild Semiconductor Corporation SGS10N60RUF Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-off Current G-E Leakage Current On Characteristics VGE th VCE sat G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Switching Characteristics td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets

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SGS10N60RUF

SGS10N60RUF

Short Circuit Rated IGBT

April 2001

IGBT

Fairchild's RUF series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies UPS and general inverters where short circuit ruggedness is a required feature.
• Short circuit rated 10us TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage VCE sat = V IC = 10A
• High input impedance

Application

AC & DC Motor controls, general purpose inverters, robotics, servo controls

TO-220F

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 TSC PD

TJ Tstg

Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds

TC = 25°C TC = 100°C

TC = 100°C TC = 25°C TC = 100°C

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

SGS10N60RUF 600 ± 20 16 10 30 10 55 22
-55 to +150 -55 to +150

Typ. ---

Max.

Units V A µs W °C °C °C

Units °C/W °C/W
2001 Fairchild Semiconductor Corporation

SGS10N60RUF

Electrical Characteristics of IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-off Current G-E Leakage Current

On Characteristics

VGE th VCE sat

G-E Threshold Voltage Collector to Emitter Saturation Voltage

Dynamic Characteristics

Cies Coes Cres

Switching Characteristics
td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets

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Datasheet ID: SGS10N60RUFTU 634762