IRFS750A

IRFS750A Datasheet

IRFS750A

Part	Datasheet
IRFS750A	IRFS750A (pdf)

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Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 µ A Max. VDS = 400V Low RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25 ΟC Continuous Drain Current TC=100 ΟC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25 ΟC Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds IRFS750A BVDSS = 400 V RDS on = ID = A TO-220F 1.Gate Drain Source Value 400 60 +_ 30 1210 49 - 55 to +150 Units V A V mJ A mJ V/ns W/ ΟC Thermal Resistance R JC R Characteristic Junction-to-Case Junction-to-Ambient 1999 Fairchild Semiconductor Corporation Typ. --- Max. Units ΟC/W IRFS750A N-CHANNEL POWER MOSFET Electrical Characteristics TC=25ΟC unless otherwise specified Symbol BVDSS VGS th

PDF Datasheet Preview

Advanced Power MOSFET

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 µ A Max. VDS = 400V Low RDS ON Typ.

Absolute Maximum Ratings

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt

TJ , TSTG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current TC=25 ΟC

Continuous Drain Current TC=100 ΟC

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation TC=25 ΟC

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

IRFS750A

BVDSS = 400 V RDS on = ID = A

TO-220F
1.Gate Drain Source

Value 400 60 +_ 30 1210 49
- 55 to +150

Units V

A V mJ A mJ V/ns W/ ΟC

Thermal Resistance

R JC R

Characteristic Junction-to-Case Junction-to-Ambient
1999 Fairchild Semiconductor Corporation

Typ. ---

Max.

Units ΟC/W

IRFS750A

N-CHANNEL POWER MOSFET

Electrical Characteristics TC=25ΟC unless otherwise specified

Symbol BVDSS

VGS th

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Datasheet ID: IRFS750A 634059