MMBF102
MMBF102 Datasheet
MMBF102 N-Channel RF Amplifier
| Part | Datasheet |
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MMBF102 |
MMBF102 (pdf) |
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| MMBF102 N-Channel RF Amplifier April 2008 MMBF102 N-Channel RF Amplifier • This device is designed primarily for electronic switching applications such as low On Resistance analog switching. • Sourced from process 50 SOT - 23 Mark 61Y Absolute Maximum Ratings* Ta=25°C unless otherwise noted VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Storage Temperature Range Value 25 -25 10 -55 to +150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25°C unless otherwise noted Parameter RqJA PD Thermal Resistance, Junction to Ambient Total Device Dissipation TC=25°C Derate above 25°C *Device mounted on FR-4 PCB X Value Units V mA °C Unit °C/W mW/°C 2007 Fairchild Semiconductor Corporation MMBF102 N-Channel RF Amplifier Electrical Characteristics* Ta=25°C unless otherwise noted Parameter Test Conditions Off Characteristics V BR GSS IGSS IG = -1.0mA, VDS = 0 VGS = -15V, VDS = 0 T = 100°C VGS off Gate-Source Cutoff Voltage Gate-Source Voltage On Characteristics * VDS = 15V, ID = 2nA VDS = 15V, ID = 200mA IDSS Zero-Gate Voltage Drain Current Forward Transconductance |
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