IXTH21N50Q
IXTH21N50Q Datasheet
IXTH / IXTM 21N50 IXTH / IXTM 24N50
| Part | Datasheet |
|---|---|
IXTH21N50Q |
IXTH21N50Q (pdf) |
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| MegaMOSTMFET IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode V DSS 500 V 500 V 21 A 24 A R DS on Test Conditions Maximum Ratings VDSS V VGS VGSM ID25 TJ = 25°C to 150°C 25°C 150°C; Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TJ TJM Tstg Md Weight = 25°C Mounting torque Maximum lead temperature for soldering mm in. from case for 10 s ±20 ±30 21N50 24N50 21N50 24N50 -55 +150 -55 +150 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g VDSS V GS th IGSS IDSS R DS on Test Conditions Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. VGS = 0 V, ID = 250 µA V, GS VGS = ±20 VDC, VDS = 0 VDS = • VDSS VGS = 0 V |
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