IRFM210BTF_FP001

IRFM210BTF_FP001 Datasheet

IRFM210B

Part	Datasheet
IRFM210BTF_FP001	IRFM210BTF_FP001 (pdf)

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IRFM210B November 2001 IRFM210B 200V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. • 0.77A, 200V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical pF • Fast switching • Improved dv/dt capability G SOT-223 IRFM Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 70°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient * * When mounted on the minimum pad size recommended PCB Mount IRFM210B 200 ± 30 40 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W 2001 Fairchild Semiconductor Corporation

PDF Datasheet Preview

IRFM210B

November 2001

IRFM210B
200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
• 0.77A, 200V, RDS on = = 10 V
• Low gate charge typical nC
• Low Crss typical pF
• Fast switching
• Improved dv/dt capability

G SOT-223

IRFM Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 70°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Ambient *
* When mounted on the minimum pad size recommended PCB Mount

IRFM210B 200 ± 30 40
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W
2001 Fairchild Semiconductor Corporation

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Datasheet ID: IRFM210BTF_FP001 634041