IRF530N_R4942

IRF530N_R4942 Datasheet

IRF530N

Part	Datasheet
IRF530N_R4942	IRF530N_R4942 (pdf)

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Data Sheet January 2002 IRF530N 22A, 100V, Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE IRF530N • Ultra Low On-Resistance - rDS ON = VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PACKAGE IRF530N TO-220AB BRAND IRF530N Absolute Maximum Ratings TC = 25oC, Unless Otherwise IRF530N UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current Continuous TC= TC= 12500oCoC, V, VGGSS==101V0V F Figiugruere2 2 . Pulsed Drain Current .IDM Pulsed Avalanche Rating .UIS ±20 Figure 4 Figures 6, 14, 15 Power Dissipation Derate Above 25oC W/oC Operating and Storage Temperature TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334 Tpkg TJ = 25oC to 150oC. CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. 2002 Fairchild Semiconductor Corporation IRF530N Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BV DSS I DSS I GSS ID = 250µA, VGS = 0V Figure 11 VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC VGS = ±20V Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS

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Data Sheet

January 2002

IRF530N
22A, 100V, Ohm, N-Channel, Power MOSFET

Packaging

JEDEC TO-220AB

SOURCE DRAIN GATE

DRAIN FLANGE

IRF530N
• Ultra Low On-Resistance - rDS ON = VGS = 10V
• Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information

PACKAGE

IRF530N

TO-220AB

BRAND IRF530N

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

IRF530N

UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS

Drain Current

Continuous

TC= TC=
12500oCoC, V, VGGSS==101V0V F Figiugruere2 2 .

Pulsed Drain Current .IDM

Pulsed Avalanche Rating .UIS
±20

Figure 4

Figures 6, 14, 15

Power Dissipation Derate Above 25oC

W/oC

Operating and Storage Temperature TJ, TSTG
-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334 Tpkg

TJ = 25oC to 150oC.

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.
2002 Fairchild Semiconductor Corporation

IRF530N

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BV DSS I DSS

I GSS

ID = 250µA, VGS = 0V Figure 11

VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC VGS = ±20V

Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS

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Datasheet ID: IRF530N_R4942 634036