PN4258

PN4258 Datasheet

PN4258

Part	Datasheet
PN4258	PN4258 (pdf)

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PN4258 PN4258 PNP Switching Transistor • This device is designed for very high speed saturated switching at collector currents to 100mA. • Sourced from process TO-92 Emitter Base Collector Absolute Maximum Ratings* TA=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaird. Value -12 -12 -200 - 55 ~ 150 Units V mA °C NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TA=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CES VCEO SUS V BR CBO V BR EBO ICES Collector-Emitter Breakdown Voltage * Collector-Emitter Sustaining Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current On Characteristics IC = -100µA, VBE = 0 IC =- 3.0mA, IB = 0 IC = -100µA, IE = 0 IE = -100µA, IC = 0 VCE = -6.0V, VBE = 0 VCE = -6.0V, VBE = 0, TA = 65°C DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage Small Signal Characteristics IC = -1.0mA, VCE = -0.5V IC = -10mA, VCE = -3.0V IC = -50mA, VCE = -1.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Current Gain Bandwidth Product IC = -10mA, VCE = -5.0V, f = 100MHz IC = -10mA, VCE = -10V, f = 100MHz Ciob

PDF Datasheet Preview

PN4258

PN4258

PNP Switching Transistor
• This device is designed for very high speed saturated switching at collector currents to 100mA.
• Sourced from process

TO-92

Emitter Base Collector

Absolute Maximum Ratings* TA=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continuous

TJ, TSTG

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.

Value -12 -12 -200
- 55 ~ 150

Units V mA °C

NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics TA=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR CES VCEO SUS V BR CBO V BR EBO ICES

Collector-Emitter Breakdown Voltage * Collector-Emitter Sustaining Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current

On Characteristics

IC = -100µA, VBE = 0 IC =- 3.0mA, IB = 0 IC = -100µA, IE = 0 IE = -100µA, IC = 0 VCE = -6.0V, VBE = 0 VCE = -6.0V, VBE = 0, TA = 65°C

DC Current Gain

VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage Small Signal Characteristics

IC = -1.0mA, VCE = -0.5V IC = -10mA, VCE = -3.0V IC = -50mA, VCE = -1.0V

IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA

IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA

Current Gain Bandwidth Product

IC = -10mA, VCE = -5.0V, f = 100MHz

IC = -10mA, VCE = -10V, f = 100MHz

Ciob

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Datasheet ID: PN4258 634502