IRFW540ATM
IRFW540ATM Datasheet
IRFW/I540A
| Part | Datasheet |
|---|---|
IRFW540ATM |
IRFW540ATM (pdf) |
| PDF Datasheet Preview |
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| Advanced Power MOSFET IRFW/I540A n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175℃ Operating Temperature n Lower Leakage Current 10 uA Max. VDS = 100V n Lower RDS ON Ω Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25℃ Continuous Drain Current TC=100℃ Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TA=25℃ * Total Power Dissipation TC=25℃ Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds BVDSS = 100 V RDS on = Ω ID = 28 A D2-PAK I2-PAK Gate Drain Source Value 100 28 110 ±20 523 28 107 - 55 to +175 Units V A V mJ A mJ V/ns W/℃ Thermal Resistance Characteristic Typ. Junction-to-Case Junction-to-Ambient * Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount . Max. 40 Units ℃/W Fairchild Semiconductor Corporation IRFW/I540A N-CHANNEL POWER MOSFET |
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