HUFA76504DK8T

HUFA76504DK8T Datasheet


HUFA76504DK8

Part Datasheet
HUFA76504DK8T HUFA76504DK8T HUFA76504DK8T (pdf)
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Data Sheet

HUFA76504DK8

June 2001
[ /Title HUF7 6400S K8 /Subject 60V, Ohm, 4A, NChannel, Logic Level UltraFE
2.3A, 80V, Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

Packaging

JEDEC MS-012AA

BRANDING DASH
1 2 3 4

SOURCE1 1 GATE1 2

DRAIN 1 8 DRAIN 1 7

Power MOSFET /Author

SOURCE2 3 GATE2 4

DRAIN 2 6 DRAIN 2 5
• Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V
• Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Internal RG =
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Transient Thermal Impedance Curve vs Board Mounting Area
Ordering Information

PACKAGE

BRAND

HUFA76504DK8

MS-012AA
76504DK8
NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76504DK8T.
/Keywords Harris Semiconductor, NChannel, Logic Level UltraFE

Power MOS-

Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified

HUFA76504DK8

UNITS

Drain to Source Voltage Note VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS

Drain Current

Continuous

TA= TA= TA= TA=
1122005500ooCCooCC,, ..2 .. N.. oN.. t..oe..te2..

Pulsed Drain Current .IDM

Pulsed Avalanche Rating .UIS
±16

Figure 4

Figures 6, 17, 18

Power Dissipation Note 2 Derate Above 25oC

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334 Tpkg NOTES TJ = 25oC to 125oC. 50oC/W measured using FR-4 board with in2 mm2 copper pad at 1 second. 228oC/W measured using FR-4 board with in2 mm2 copper pad at 1000 seconds.
20 -55 to 150
300 260

W mW/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

CAUTION These devices are sensitive to electrostatic discharge follow proper ESD Handling Procedures. is a registered trademark of Fairchild Corporation. is a registered trademark of Cadence Corporation.

SABER is a registered trademark of Avanti corporation.

HUFA76504DK8

Electrical Specifications TA = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BVDSS IDSS IGSS

ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TA = -40oC Figure 12

VDS = 75V, VGS = 0V VDS = 70V, VGS = 0V, TA = 150oC
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Datasheet ID: HUFA76504DK8T 634013