HUFA76504DK8
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HUFA76504DK8T (pdf) |
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Data Sheet HUFA76504DK8 June 2001 [ /Title HUF7 6400S K8 /Subject 60V, Ohm, 4A, NChannel, Logic Level UltraFE 2.3A, 80V, Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC MS-012AA BRANDING DASH 1 2 3 4 SOURCE1 1 GATE1 2 DRAIN 1 8 DRAIN 1 7 Power MOSFET /Author SOURCE2 3 GATE2 4 DRAIN 2 6 DRAIN 2 5 • Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Internal RG = • Peak Current vs Pulse Width Curve • UIS Rating Curve • Transient Thermal Impedance Curve vs Board Mounting Area Ordering Information PACKAGE BRAND HUFA76504DK8 MS-012AA 76504DK8 NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76504DK8T. /Keywords Harris Semiconductor, NChannel, Logic Level UltraFE Power MOS- Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified HUFA76504DK8 UNITS Drain to Source Voltage Note VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current Continuous TA= TA= TA= TA= 1122005500ooCCooCC,, ..2 .. N.. oN.. t..oe..te2.. Pulsed Drain Current .IDM Pulsed Avalanche Rating .UIS ±16 Figure 4 Figures 6, 17, 18 Power Dissipation Note 2 Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief TB334 Tpkg NOTES TJ = 25oC to 125oC. 50oC/W measured using FR-4 board with in2 mm2 copper pad at 1 second. 228oC/W measured using FR-4 board with in2 mm2 copper pad at 1000 seconds. 20 -55 to 150 300 260 W mW/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation CAUTION These devices are sensitive to electrostatic discharge follow proper ESD Handling Procedures. is a registered trademark of Fairchild Corporation. is a registered trademark of Cadence Corporation. SABER is a registered trademark of Avanti corporation. HUFA76504DK8 Electrical Specifications TA = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TA = -40oC Figure 12 VDS = 75V, VGS = 0V VDS = 70V, VGS = 0V, TA = 150oC |
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