HUF75829D3S

HUF75829D3S Datasheet

HUFA75829D3, HUFA75829D3S

Part	Datasheet
HUF75829D3S	HUF75829D3S (pdf)

Related Parts	Information
HUFA75829D3S	HUFA75829D3S
HUF75829D3	HUF75829D3
HUFA75829D3ST	HUFA75829D3ST
HUF75829D3ST	HUF75829D3ST

PDF Datasheet Preview
Data Sheet HUFA75829D3, HUFA75829D3S December 2001 18A, 150V, Ohm, N-Channel, Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE DRAIN FLANGE HUFA75829D3 GATE SOURCE DRAIN FLANGE HUFA75829D3S • Ultra Low On-Resistance - rDS ON = VGS = 10V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PACKAGE BRAND HUFA75829D3 TO-251AA 75829D HUFA75829D3S TO-252AA 75829D NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA75829D3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUFA75829D3, HUFA75829D3S UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±20 Drain Current Continuous 12050oCoC, ,VVGGSS==1100VV F Figiguurere22 18 13 Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figures 6, 14, 15 Power Dissipation PD Derate Above 25oC W/oC Operating and Storage Temperature TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief TB334. Tpkg NOTES TJ = 25oC to 150oC. CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUFA75829D3, HUFA75829D3S Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 11 VDS = 140V, VGS = 0V VDS = 135V, VGS = 0V, TC = 150oC VGS = ±20V Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS VGS TH rDS ON VGS = VDS, ID = 250µA Figure 10 ID = 18A, VGS = 10V Figure 9

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Data Sheet

HUFA75829D3, HUFA75829D3S

December 2001
18A, 150V, Ohm, N-Channel, Power MOSFETs

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

SOURCE DRAIN GATE

DRAIN FLANGE

HUFA75829D3

GATE SOURCE

DRAIN FLANGE

HUFA75829D3S
• Ultra Low On-Resistance - rDS ON = VGS = 10V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information

PACKAGE

BRAND

HUFA75829D3

TO-251AA
75829D

HUFA75829D3S

TO-252AA
75829D
NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA75829D3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HUFA75829D3, HUFA75829D3S UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±20

Drain Current

Continuous
12050oCoC, ,VVGGSS==1100VV F Figiguurere22
18 13

Pulsed Drain Current IDM

Figure 4

Pulsed Avalanche Rating UIS

Figures 6, 14, 15

Power Dissipation PD

Derate Above 25oC

W/oC

Operating and Storage Temperature TJ, TSTG
-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s TL

Package Body for 10s, See Techbrief TB334. Tpkg

NOTES TJ = 25oC to 150oC.

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUFA75829D3, HUFA75829D3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BVDSS IDSS

IGSS

ID = 250µA, VGS = 0V Figure 11 VDS = 140V, VGS = 0V VDS = 135V, VGS = 0V, TC = 150oC VGS = ±20V

Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS

VGS TH rDS ON

VGS = VDS, ID = 250µA Figure 10 ID = 18A, VGS = 10V Figure 9

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Datasheet ID: HUF75829D3S 633993