HGT1S20N36G3VL

HGT1S20N36G3VL Datasheet

HGTP20N36G3VL,HGT1S20N36G3VLS, HGT1S20N36G3VL

Part	Datasheet
HGT1S20N36G3VL	HGT1S20N36G3VL (pdf)

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March 2004 HGTP20N36G3VL,HGT1S20N36G3VLS, HGT1S20N36G3VL 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175oC • Ignition Energy Capable This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching SCIS capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit. PACKAGING PACKAGE BRAND HGTP20N36G3VL TO-220AB 20N36GVL HGT1S20N36G3VL TO-262AA 20N36GVL HGT1S20N36G3VLS TO-263AB 20N36GVL Packages COLLECTOR FLANGE JEDEC TO-220AB EC G JEDEC TO-263AB JEDEC TO-262AA ECG COLLECTOR FLANGE COLLECTOR FLANGE COLLECTOR The development type number for this device is TA49296. GATE R1 R2 EMITTER Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Bkdn Voltage At 10mA, RGE = BVCER Emitter-Collector Bkdn Voltage At 10mA BVECS Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 IC25 At VGE = 5.0V, TC = +100oC .IC100 Gate-Emitter-Voltage Note VGES Inductive Switching Current At L = 2.3mH, TC = +25o C ISCIS At L = 2.3mH, TC = +150oC ISCIS Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC EAS Power Dissipation Total At TC = +25oC PD Power Dissipation Derating TC > +25oC. Operating and Storage Junction Temperature Range TJ, TSTG Maximum Lead Temperature for Soldering .TL Electrostatic Voltage at 100pF, ESD NOTE May be exceeded if IGEM is limited to 10mA. HGTP20N36G3VL HGT1S20N36G3VL HGT1S20N36G3VLS 395 28 26 ±10 21 16 500 150 -40 to +175 260 6 UNITS V A mJ W/oC KV 2004 Fairchild Semiconductor Corporation Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Electrical Specifications TC = +25oC, Unless Otherwise Specified

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March 2004

HGTP20N36G3VL,HGT1S20N36G3VLS, HGT1S20N36G3VL
20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175oC
• Ignition Energy Capable

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching SCIS capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor
and a shunt resistor are provided in the gate circuit.

PACKAGING

PACKAGE

BRAND

HGTP20N36G3VL

TO-220AB
20N36GVL

HGT1S20N36G3VL

TO-262AA
20N36GVL

HGT1S20N36G3VLS

TO-263AB
20N36GVL

Packages

COLLECTOR FLANGE

JEDEC TO-220AB EC G

JEDEC TO-263AB

JEDEC TO-262AA ECG

COLLECTOR FLANGE

COLLECTOR FLANGE

COLLECTOR

The development type number for this device is TA49296.

GATE

R1 R2

EMITTER

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified

Collector-Emitter Bkdn Voltage At 10mA, RGE = BVCER Emitter-Collector Bkdn Voltage At 10mA BVECS Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 IC25

At VGE = 5.0V, TC = +100oC .IC100 Gate-Emitter-Voltage Note VGES Inductive Switching Current At L = 2.3mH, TC = +25o C ISCIS

At L = 2.3mH, TC = +150oC ISCIS Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC EAS Power Dissipation Total At TC = +25oC PD Power Dissipation Derating TC > +25oC. Operating and Storage Junction Temperature Range TJ, TSTG Maximum Lead Temperature for Soldering .TL Electrostatic Voltage at 100pF, ESD NOTE May be exceeded if IGEM is limited to 10mA.

HGTP20N36G3VL HGT1S20N36G3VL HGT1S20N36G3VLS
395 28 26 ±10 21 16 500 150 -40 to +175 260 6

UNITS V

A mJ W/oC KV
2004 Fairchild Semiconductor Corporation

Specifications HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS

Electrical Specifications TC = +25oC, Unless Otherwise Specified

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Datasheet ID: HGT1S20N36G3VL 633903