HGT1S14N36G3VLS
HGT1S14N36G3VLS Datasheet
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
| Part | Datasheet |
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HGT1S14N36G3VLS |
HGT1S14N36G3VLS (pdf) |
| Related Parts | Information |
|---|---|
HGT1S14N36G3VLT |
HGT1S14N36G3VLT |
| PDF Datasheet Preview |
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| December 2001 HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175oC • Ignition Energy Capable Packages COLLECTOR FLANGE JEDEC TO-220AB EMITTER COLLECTOR GATE This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching SCIS capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit. PACKAGING AVAILABILITY PACKAGE BRAND HGTP14N36G3VL TO-220AB 14N36GVL HGT1S14N36G3VL TO-262AA 14N36GVL HGT1S14N36G3VLS TO-263AB 14N36GVL NOTE When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S14N36G3VLS9A. COLLECTOR FLANGE JEDEC TO-262AA EMITTER COLLECTOR GATE JEDEC TO-263AB COLLECTOR FLANGE GATE EMITTER Terminal Diagram N-CHANNEL ENHANCEMENT MODE COLLECTOR The development type number for this device is TA49021. R1 GATE EMITTER Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Bkdn Voltage at 10mA BVCER Emitter-Collector Bkdn Voltage at 10mA BVECS Collector Current Continuous at VGE = 5V, TC = +25oC. IC25 at VGE = 5V, TC = +100oC IC100 Gate-Emitter Voltage Note VGEM Inductive Switching Current at L = 2.3mH, TC = +25oC ISCIS at L = 2.3mH, TC = + 175oC ISCIS Collector to Emitter Avalanche Energy at L = 2.3mH, TC = +25oC. EAS Power Dissipation Total at TC = +25oC PD Power Dissipation Derating TC > +25oC. Operating and Storage Junction Temperature Range TJ, TSTG Maximum Lead Temperature for Soldering TL Electrostatic Voltage at 100pF, ESD HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS 390 24 18 14 ±10 17 12 332 100 -40 to +175 260 6 UNITS V A mJ W/oC KV NOTE May be exceeded if IGEM is limited to 10mA. 2001 Fairchild Semiconductor Corporation Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Electrical Specifications TC = +25oC, Unless Otherwise Specified PARAMETERS Collector-Emitter Breakdown Voltage Gate-Emitter Plateau Voltage Gate Charge Collector-Emitter Clamp Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Gate Series Resistance Gate-Emitter Resistance Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load Inductive Use Test Thermal Resistance TEST CONDITIONS BVCER IC = 10mA, VGE = 0V RGE = VGEP QG ON BVCE CL BVECS ICER IC = 7A, VCE = 12V IC = 7A, VCE = 12V IC = 7A RG = IC = 10mA VCE = 250V RGE = VCE SAT IC = 7A VGE = 4.5V |
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