PTFA080551F V1
PTFA080551F V1 Datasheet
PTFA080551E PTFA080551F
| Part | Datasheet |
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PTFA080551F V1 |
PTFA080551F V1 (pdf) |
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PTFA080551E V1 |
PTFA080551E V1 |
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| PTFA080551E PTFA080551F Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 960 MHz The PTFA080551E and PTFA080551F are 55-watt, internally matched FETs intended for EDGE and CDMA applications in the 869 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA080551E Package 30265 PTFA080551F Package 31265 Drain Efficiency % Adj. Ch. Power Ratio dBc Three-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 450 mA, = 960 MHz Efficiency 25 ACP Low 20 ACP Up -45 -50 -55 -60 ALT Up -65 29 31 33 35 37 39 41 43 Output Power, Avg. dBm • Broadband internal matching • Typical EDGE performance - Average output power = 26 W - Gain = 18 dB - Efficiency = 44% • Typical CW performance - Output power at = 75 W - Gain = 17 dB - Efficiency = 67% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 28 V, 55 W CW output power • Pb-free and RoHS compliant RF Characteristics EDGE Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 450 mA, POUT = 26 W, = MHz Characteristic Symbol Min Typ Unit Error Vector Magnitude EVM RMS Modulation Spectrum 400 kHz ACPR Modulation Spectrum 600 kHz ACPR Gain Drain Efficiency All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 11 PTFA080551E PTFA080551F RF Characteristics cont. Two-tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 450 mA, POUT = 55 W PEP, = 960 MHz, tone spacing = 1 MHz Ordering Information Type PTFA080551E PTFA080551F Package Outline 30265 31265 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Marking PTFA080551E PTFA080551F *See Infineon distributor for future availability. Data Sheet 2 of 11 PTFA080551E PTFA080551F Typical Performance data taken in a production test fixture Drain Efficiency % EVM RMS avg. % Edge EVM and Modulation Spectrum vs. Quiescent Current VDD = 28 V, = MHz, POUT = 22 W 400 kHz 600 kHz -80 Quiescent Current A Modulation Spectrum dBc Modulation Spectrum dBc EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 450 mA, = MHz Efficiency 400 kHz 600 kHz -100 32 34 36 38 40 42 44 46 Output Power dBm EVM RMS avg. % EDGE EVM Performance VDD = 28 V, IDQ = 450 m A, = MHz Efficiency 32 34 36 38 40 42 44 46 Output Power dBm Drain Efficiency % IMD dBc Intermodulation Distortion vs. Output Power as measured in a broadband circuit VDD = 28 V, IDQ = 450 mA, = 959 MHz, = 960 MHz -20 -25 -30 -35 -40 -45 3rd Order -50 5th -55 -60 7th -65 30 32 34 36 38 40 42 44 46 Output Power, Avg. dBm Data Sheet 3 of 11 Typical Performance cont. Broadband CW Performance at P-1dB VDD = 28 V, IDQ = 450 m A |
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