H11AG2

H11AG2 Datasheet


H11AG1

Part Datasheet
H11AG2 H11AG2 H11AG2 (pdf)
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H11AG13SD H11AG13SD H11AG13SD
H11AG1W H11AG1W H11AG1W
H11AG1SD H11AG1SD H11AG1SD
H11AG1S H11AG1S H11AG1S
H11AG3W H11AG3W H11AG3W
H11AG3SD H11AG3SD H11AG3SD
H11AG3S H11AG3S H11AG3S
H11AG33SD H11AG33SD H11AG33SD
H11AG33S H11AG33S H11AG33S
H11AG3300W H11AG3300W H11AG3300W
H11AG3 H11AG3 H11AG3
H11AG13S H11AG13S H11AG13S
H11AG1300W H11AG1300W H11AG1300W
H11AG1300 H11AG1300 H11AG1300
H11AG2300W H11AG2300W H11AG2300W
H11AG2300 H11AG2300 H11AG2300
H11AG2W H11AG2W H11AG2W
H11AG23S H11AG23S H11AG23S
H11AG2SD H11AG2SD H11AG2SD
H11AG2S H11AG2S H11AG2S
H11AG23SD H11AG23SD H11AG23SD
H11AG3300 H11AG3300 H11AG3300
H11AG1 H11AG1 H11AG1
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PHOTOTRANSISTOR OPTOCOUPLERS

H11AG1

H11AG2

The H11AG series consists of a Gallium-Aluminum-

Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device
provides the unique feature of the high current transfer
ratio at both low output voltage and low input current.

This makes it ideal for use in low power logic circuits,
telecommunications equipment and portable electronics
isolation applications.
• High efficiency low degradation liquid epitaxial IRED
• Logic level compatible, input and output currents, with

CMOS and LS/TTL
• High DC current transfer ratio at low input currents
• Underwriters Laboratory UL recognized File #E90700 6
• CMOS driven solid state reliability
• Telephone ring detector
• Digital logic isolation

ABSOLUTE MAXIMUM RATINGS

Parameters TOTAL DEVICE

Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation 25°C LED plus detector

Derate Linearly From 25°C EMITTER

Derate Linearly From 25°C DETECTOR

Detector Power Dissipation 25°C Derate Linearly from 25°C Continuous Collector Current

Symbol TSTG TOPR TSOL PD

IF VR IF pk PD

Device All

H11AG3

SCHEMATIC

ANODE 1
6 BASE

CATHODE 2
5 COL

N/C 3
4 EMITTER

Value
-55 to +150
-55 to +100 260 for 10 sec
150 50

Units
°C °C mW/°C
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Datasheet ID: H11AG2 633866