H11AG23SD

H11AG23SD Datasheet

H11AG1

Part	Datasheet
H11AG23SD	H11AG23SD (pdf)

Related Parts	Information
H11AG13SD	H11AG13SD
H11AG2	H11AG2
H11AG1W	H11AG1W
H11AG1SD	H11AG1SD
H11AG1S	H11AG1S
H11AG3W	H11AG3W
H11AG3SD	H11AG3SD
H11AG3S	H11AG3S
H11AG33SD	H11AG33SD
H11AG33S	H11AG33S
H11AG3300W	H11AG3300W
H11AG3	H11AG3
H11AG13S	H11AG13S
H11AG1300W	H11AG1300W
H11AG1300	H11AG1300
H11AG2300W	H11AG2300W
H11AG2300	H11AG2300
H11AG2W	H11AG2W
H11AG23S	H11AG23S
H11AG2SD	H11AG2SD
H11AG2S	H11AG2S
H11AG3300	H11AG3300
H11AG1	H11AG1

PDF Datasheet Preview
PHOTOTRANSISTOR OPTOCOUPLERS H11AG1 H11AG2 The H11AG series consists of a Gallium-Aluminum- Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications. • High efficiency low degradation liquid epitaxial IRED • Logic level compatible, input and output currents, with CMOS and LS/TTL • High DC current transfer ratio at low input currents • Underwriters Laboratory UL recognized File #E90700 6 • CMOS driven solid state reliability • Telephone ring detector • Digital logic isolation ABSOLUTE MAXIMUM RATINGS Parameters TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation 25°C LED plus detector Derate Linearly From 25°C EMITTER Derate Linearly From 25°C DETECTOR Detector Power Dissipation 25°C Derate Linearly from 25°C Continuous Collector Current Symbol TSTG TOPR TSOL PD IF VR IF pk PD Device All H11AG3 SCHEMATIC ANODE 1 6 BASE CATHODE 2 5 COL N/C 3 4 EMITTER Value -55 to +150 -55 to +100 260 for 10 sec 150 50 Units °C °C mW/°C

PDF Datasheet Preview

PHOTOTRANSISTOR OPTOCOUPLERS

H11AG1

H11AG2

The H11AG series consists of a Gallium-Aluminum-

Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device
provides the unique feature of the high current transfer
ratio at both low output voltage and low input current.

This makes it ideal for use in low power logic circuits,
telecommunications equipment and portable electronics
isolation applications.
• High efficiency low degradation liquid epitaxial IRED
• Logic level compatible, input and output currents, with

CMOS and LS/TTL
• High DC current transfer ratio at low input currents
• Underwriters Laboratory UL recognized File #E90700 6
• CMOS driven solid state reliability
• Telephone ring detector
• Digital logic isolation

ABSOLUTE MAXIMUM RATINGS

Parameters TOTAL DEVICE

Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation 25°C LED plus detector

Derate Linearly From 25°C EMITTER

Derate Linearly From 25°C DETECTOR

Detector Power Dissipation 25°C Derate Linearly from 25°C Continuous Collector Current

Symbol TSTG TOPR TSOL PD

IF VR IF pk PD

Device All

H11AG3

SCHEMATIC

ANODE 1
6 BASE

CATHODE 2
5 COL

N/C 3
4 EMITTER

Value
-55 to +150
-55 to +100 260 for 10 sec
150 50

Units
°C °C mW/°C

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived H11AG23SD Datasheet file may be downloaded here without warranties.

Datasheet ID: H11AG23SD 633866