FYPF1504DNTU
FYPF1504DNTU Datasheet
FYPF1504DN
| Part | Datasheet |
|---|---|
FYPF1504DNTU |
FYPF1504DNTU (pdf) |
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| FYPF1504DN FYPF1504DN • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection • Switched mode power supply • Freewheeling diodes TO-220F Anode 2.Cathode Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VRRM VR IF AV IFSM Maximum Average Rectified Current TC = 120°C Maximum Forward Surge Current per diode 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics Parameter Maximum Thermal Resistance, Junction to Case per diode Electrical Characteristics per diode Symbol VFM * IRM * Parameter Maximum Instantaneous Forward Voltage IF = 7.5A IF = 7.5A IF = 15A IF = 15A * Pulse Test Pulse Width=300µs, Duty Cycle=2% TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C Value 40 15 100 -40 to +150 Value Value Units V A °C Units °C/W Units V 2000 Fairchild Semiconductor International FYPF1504DN Typical Characteristics Forward Current, I F[A] TJ=125 oC TJ=75 oC TJ=25 oC Forward Voltage Drop, VF[V] Figure Typical Forward Voltage Characteristics per diode 1000 900 800 700 600 500 400 |
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