IPS05N03LB G

IPS05N03LB G Datasheet


IPS05N03LB G

Part Datasheet
IPS05N03LB G IPS05N03LB G IPS05N03LB G (pdf)
Related Parts Information
IPD05N03LB G IPD05N03LB G IPD05N03LB G
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Type

Power-Transistor

Package Marking
• Qualified according to JEDEC1 for target applications
• N-channel, logic level
• Excellent gate charge x R DS on product FOM
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating RoHS compliant

IPD05N03LB G

IPS05N03LB G

Product Summary V DS R DS on ,max ID

Type

IPD05N03LB G

IPS05N03LB G

Package Marking

PG-TO252-3-11 05N03LB

PG-TO251-3-11 05N03LB

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C2

T C=100 °C

Pulsed drain current

I D,pulse T C=25 °C3

Avalanche energy, single pulse

I D=90 A, R GS=25
dv /dt

I D=90 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C

Gate source voltage4

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value
90 74 420 120
±20 94 -55 175 55/175/56

Unit A
mJ kV/µs V W °C
2008-04-14

IPD05N03LB G

IPS05N03LB G

Parameter

Symbol Conditions
min.
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Datasheet ID: IPS05N03LBG 638199