IPD05N03LB G
IPD05N03LB G Datasheet
IPD05N03LB G
| Part | Datasheet |
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IPD05N03LB G |
IPD05N03LB G (pdf) |
| Related Parts | Information |
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IPS05N03LB G |
IPS05N03LB G |
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| Type Power-Transistor Package Marking • Qualified according to JEDEC1 for target applications • N-channel, logic level • Excellent gate charge x R DS on product FOM • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating RoHS compliant IPD05N03LB G IPS05N03LB G Product Summary V DS R DS on ,max ID Type IPD05N03LB G IPS05N03LB G Package Marking PG-TO252-3-11 05N03LB PG-TO251-3-11 05N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 T C=100 °C Pulsed drain current I D,pulse T C=25 °C3 Avalanche energy, single pulse I D=90 A, R GS=25 dv /dt I D=90 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 90 74 420 120 ±20 94 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2008-04-14 IPD05N03LB G IPS05N03LB G Parameter Symbol Conditions min. |
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